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BSC034N03LSGATMA1

BSC034N03LSGATMA1
Mfr. #:
BSC034N03LSGATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC034N03LSGATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
100 A
Rds On - ағызу көзіне қарсылық:
2.8 mOhms
Vgs th - Gate-Source шекті кернеуі:
1 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
52 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
57 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.27 mm
Ұзындығы:
5.9 mm
Серия:
OptiMOS 3
Транзистор түрі:
1 N-Channel
Ені:
5.15 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
45 S
Күз уақыты:
4.6 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
4.8 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
28 ns
Қосудың әдеттегі кешігу уақыты:
6.9 ns
Бөлім # Бүркеншік аттар:
BSC034N03LS BSC34N3LSGXT G SP000475948
Бірлік салмағы:
0.004205 oz
Tags
BSC034N03, BSC034, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 3.4 mOhm 39 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 30V, 100A, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 100A, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 57W; Transistor Case Style: PG-TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***ure Electronics
Single N-Channel 30 V 3.3 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***et Japan
Transistor MOSFET N-CH 30V 25A 8-Pin QFN T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24mA; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***ment14 APAC
MOSFET, N, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:PQFN; Power Dissipation Pd:3.4W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***ure Electronics
Single N-Channel 30 V 7.5 mOhm 17 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 30V, 24A, 3.5 MOHM, 20 NC QG, PQFN56
***ment14 APAC
MOSFET, N CH, 30V, 24A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 34 V 3.8 mOhm 34 nC OptiMOS™ Power Mosfet - TDSON-8
***et
Transistor MOSFET N-CH 34V 98A 8-Pin TDSON Tube
***ark
Mosfet, N-Ch, 34V, 98A, Pg-Tdson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:34V; On Resistance Rds(On):0.0032Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
*** Services
CoC and 2-years warranty / RFQ for pricing
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),TO-252AA
***emi
PowerTrench® MOSFET, N-Channel, 30V, 94A, 4.7mΩ
***ment14 APAC
MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Source Voltage Vds:30V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***nell
MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 94A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 75A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 30V, 75A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC034N03LSGATMA1
DISTI # V72:2272_06384624		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		4240
  • 3000:$0.3389
  • 1000:$0.3424
  • 500:$0.4174
  • 250:$0.4534
  • 100:$0.4689
  • 25:$0.5754
  • 10:$0.5826
  • 1:$0.6596
BSC034N03LSGATMA1
DISTI # BSC034N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.3870
BSC034N03LSGATMA1
DISTI # 27607303		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		4240
  • 3000:$0.3389
  • 1000:$0.3424
  • 500:$0.4174
  • 250:$0.4534
  • 100:$0.4689
  • 25:$0.5754
  • 24:$0.5826
BSC034N03LSGXT
DISTI # BSC034N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP - Tape and Reel (Alt: BSC034N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 5000
  • 5000:$0.3439
  • 10000:$0.3439
  • 20000:$0.3429
  • 30000:$0.3419
  • 50000:$0.3409
BSC034N03LSGATMA1
DISTI # 97Y1248		Infineon Technologies AGMOSFET, N-CH, 30V, 100A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes3279
  • 1:$0.8700
  • 10:$0.7410
  • 25:$0.6840
  • 50:$0.6260
  • 100:$0.5690
  • 250:$0.5360
  • 500:$0.5030
  • 1000:$0.3970
BSC034N03LSGATMA1.
DISTI # 27AC1073		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:57W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3440
  • 20000:$0.3430
  • 30000:$0.3420
  • 50000:$0.3410
BSC034N03LSGATMA1
DISTI # 726-BSC034N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		6331
  • 1:$0.8700
  • 10:$0.7410
  • 100:$0.5690
  • 500:$0.5030
  • 1000:$0.3970
  • 5000:$0.3520
BSC034N03LS G
DISTI # 726-BSC034N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		246
  • 1:$0.8900
  • 10:$0.7600
  • 100:$0.5900
  • 500:$0.5200
  • 1000:$0.4100
BSC034N03LSGATMA1
DISTI # BSC034N03LSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,100A,57W,PG-TDSON-82534
  • 1:$0.6244
  • 3:$0.5530
  • 10:$0.4649
  • 100:$0.4167
  • 1000:$0.3880
BSC034N03LSGATMA1
DISTI # 2617420		Infineon Technologies AGMOSFET, N-CH, 30V, 100A, PG-TDSON-8
RoHS: Compliant		3282
  • 5:£0.6290
  • 25:£0.5670
  • 100:£0.4310
  • 250:£0.4060
  • 500:£0.3810
BSC034N03LSGATMA1
DISTI # C1S322000626320		Infineon Technologies AGMOSFETs
RoHS: Compliant		4240
  • 250:$0.4637
  • 100:$0.4689
  • 25:$0.5756
  • 10:$0.5826
BSC034N03LSGATMA1
DISTI # 2617420		Infineon Technologies AGMOSFET, N-CH, 30V, 100A, PG-TDSON-8
RoHS: Compliant		3279
  • 1:$1.4900
  • 10:$1.3000
  • 100:$1.0600
  • 250:$0.8940
  • 500:$0.7730
  • 1000:$0.7310
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LM2664M6/NOPB

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OMO.#: OMO-352130RFT

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114555P2

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OMO.#: OMO-114555P2-673

 Heavy Duty Power Connectors PP15/45 12mm X 13.5mm STAPLE
LM2664M6/NOPB

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OMO.#: OMO-LM2664M6-NOPB-TEXAS-INSTRUMENTS

 Voltage Regulators - Switching Regulators SWITCHED CAPACITOR VLTG CONVERTER
105133-0001

Mfr.#: 105133-0001

OMO.#: OMO-105133-0001-393

 Conn USB RCP 5 POS 0.65mm Solder RA SMD 5 Terminal 1 Port - Tape and Reel (Alt: 1051330001)
352130RFT

Mfr.#: 352130RFT

OMO.#: OMO-352130RFT-TE-CONNECTIVITY-AMP

 Thick Film Resistors - SMD 3521 30R 1% 2W
CPC1014NTR

Mfr.#: CPC1014NTR

OMO.#: OMO-CPC1014NTR-IXYS-INTEGRATED-CIRCUITS-DIVIS

 Solid State Relays - PCB Mount 1-Form-A 60V 400mA Solid State Relay
XAL1010-103MED

Mfr.#: XAL1010-103MED

OMO.#: OMO-XAL1010-103MED-1190

 Fixed Inductors 10uH 20% 15.5A 14.75mOhms AEC-Q200
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1987
Саны енгізіңіз:
BSC034N03LSGATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,86 $
0,86 $
10
0,74 $
7,41 $
100
0,57 $
56,90 $
500
0,50 $
251,50 $
1000
0,40 $
397,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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