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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| HGT1S10N120BNST DISTI # HGT1S10N120BNSTCT-ND | ON Semiconductor | IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1219In Stock |
|
| HGT1S10N120BNST DISTI # HGT1S10N120BNSTDKR-ND | ON Semiconductor | IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1219In Stock |
|
| HGT1S10N120BNST DISTI # HGT1S10N120BNSTTR-ND | ON Semiconductor | IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | 800In Stock |
|
| HGT1S10N120BNS DISTI # HGT1S10N120BNSFS-ND | ON Semiconductor | IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 800 Container: Tube | Limited Supply - Call |
|
| HGT1S10N120BNS DISTI # HGT1S10N120BNS | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail - Bulk (Alt: HGT1S10N120BNS) RoHS: Compliant Min Qty: 92 Container: Bulk | Americas - 0 |
|
| HGT1S10N120BNS DISTI # HGT1S10N120BNS | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S10N120BNS) RoHS: Compliant Min Qty: 800 Container: Tube | Americas - 0 |
|
| HGT1S10N120BNST DISTI # HGT1S10N120BNST | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R (Alt: HGT1S10N120BNST) RoHS: Compliant Min Qty: 800 Container: Tape and Reel | Europe - 0 |
|
| HGT1S10N120BNST DISTI # HGT1S10N120BNST | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HGT1S10N120BNST) RoHS: Compliant Min Qty: 800 Container: Reel | Americas - 0 |
|
| HGT1S10N120BNST DISTI # 29H0101 | ON Semiconductor | IGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes | 0 |
|
| HGT1S10N120BNST DISTI # 31Y1824 | ON Semiconductor | IGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes | 496 |
|
| HGT1S10N120BNS DISTI # 98B1956 | ON Semiconductor | TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB RoHS Compliant: Yes | 0 |
|
| HGT1S10N120BNST DISTI # 512-HGT1S10N120BNST | ON Semiconductor | IGBT Transistors N-Channel IGBT NPT Series 1200V RoHS: Compliant | 497 |
|
| HGT1S10N120BNS DISTI # 512-HGT1S10N120BNS | ON Semiconductor | IGBT Transistors 35A 1200V NPT N-Ch RoHS: Compliant | 0 | |
| HGT1S10N120BNS | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 493 |
|
| HGT1S10N120BNST DISTI # 8076660P | ON Semiconductor | IGBTFAIRCHILDHGT1S10N120BNST, RL | 1410 |
|
| HGT1S10N120BNST DISTI # 8076660 | ON Semiconductor | IGBTFAIRCHILDHGT1S10N120BNST, PK | 18 |
|
| HGT1S10N120BNST DISTI # HGT1S10N120BNST | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,D2PAK | 1049 |
|
| HGT1S10N120BNST DISTI # 2454176 | ON Semiconductor | IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 RoHS: Compliant | 496 |
|
| HGT1S10N120BNST DISTI # 2454176RL | ON Semiconductor | IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 RoHS: Compliant | 0 |
|
| HGT1S10N120BNST DISTI # 2454176 | ON Semiconductor | IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 | 697 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: 10N10 OMO.#: OMO-10N10-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: 10N10/12N10/13N10 OMO.#: OMO-10N10-12N10-13N10-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: 10N100 OMO.#: OMO-10N100-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: 10N10EL OMO.#: OMO-10N10EL-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: 10N120 OMO.#: OMO-10N120-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: 10N120BNS OMO.#: OMO-10N120BNS-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: 10N120ND OMO.#: OMO-10N120ND-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: 10N138 OMO.#: OMO-10N138-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: 10N15 OMO.#: OMO-10N15-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: 10N16 10P16 OMO.#: OMO-10N16-10P16-1190 |
Жаңа және түпнұсқа |