FF600R12ME4EB11BOSA1

FF600R12ME4EB11BOSA1
Mfr. #:
FF600R12ME4EB11BOSA1
Өндіруші:
Infineon Technologies
Сипаттама:
IGBT Modules
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FF600R12ME4EB11BOSA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
FF600R12ME4EB11BOSA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
IGBT модульдері
RoHS:
Y
Өнім:
IGBT кремний модульдері
Конфигурация:
Жалпы эмитент
Коллектор-эмиттер кернеуі VCEO Max:
1200 V
Коллектор-эмиттер қанығу кернеуі:
1.75 V
Үздіксіз коллектор тогы 25 С:
600 A
Шлюз-эмиттер ағып кету тогы:
400 nA
Pd - қуаттың шығыны:
20 mW
Пакет/қорап:
152 mm x 62.5 mm x 20.5 mm
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 150 C
Қаптама:
Науа
Бренд:
Infineon Technologies
Орнату стилі:
Fit түймесін басыңыз
Шықпа эмитентінің максималды кернеуі:
15 V
Өнім түрі:
IGBT модульдері
Зауыттық буманың саны:
6
Ішкі санат:
IGBT
Бөлім # Бүркеншік аттар:
SP001671626
Tags
FF600R12ME4, FF600R12M, FF600R12, FF600R1, FF600, FF60, FF6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
EconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray
***ark
Igbt Mod, Dual N-Ch, 1.2Kv, 600A; Transistor Polarity:dual N Channel; Dc Collector Current:600A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
Summary of Features: EconoDUAL 3 with Common Emitter topology; Low VCEsat; Tvj op = 150C; VISO = 3.4kVrms 1 min ( 4.8kV DC 1 min); Standard Housing; PressFIT control pins and screw power terminals; Compact and robust design with molded terminals | Benefits: 3-level NPC2 configuration based on established EconoDUAL 3 housing; In line with UL requirements for 1500V solar inverters; Compact modules; Easy and most reliable assembly; No plugs and cables required | Target Applications: solar; ups; drives
Infineon EconoDUAL™ 3 with Common Emitter
Infineon EconoDUAL™ 3 with Common Emitter are suited for 1500V and 1000V solar inverters, and are dedicated modules for 3-level NPC2 topologies. The EconoDUAL™ 3 is widely used in 1000V systems for solar applications and provides a new solution for relying on the established EconoDUAL™ 3 housing in future designs. Two new EconoDUAL™ 3 modules with Common Emitter configuration are available, the FF450R12ME4E_B11 and FF600R12ME4E_B11. Both are equipped with the proven PressFIT housing, enabling for fast and cost efficient assembly in the production line.
Бөлім № Mfg. Сипаттама Қор Бағасы
FF600R12ME4EB11BOSA1
DISTI # V99:2348_18787569
Infineon Technologies AGMEDIUM POWER ECONO1
  • 1:$242.6500
FF600R12ME4EB11BOSA1
DISTI # FF600R12ME4EB11BOSA1-ND
Infineon Technologies AGMOD IGBT MED PWR ECONOD-5
RoHS: Compliant
Min Qty: 1
Container: Tray
6In Stock
  • 12:$232.6908
  • 1:$242.9600
FF600R12ME4EB11BOSA1
DISTI # 31575567
Infineon Technologies AGMEDIUM POWER ECONO6
  • 25:$218.9385
  • 10:$222.0570
  • 6:$227.7000
FF600R12ME4EB11BOSA1
DISTI # 30304246
Infineon Technologies AGMEDIUM POWER ECONO1
  • 1:$242.6500
FF600R12ME4EB11BOSA1
DISTI # FF600R12ME4EB11BOSA1
Infineon Technologies AGEconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray - Trays (Alt: FF600R12ME4EB11BOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray
Americas - 0
  • 60:$206.0900
  • 36:$211.1900
  • 24:$216.4900
  • 12:$222.1900
  • 6:$225.0900
FF600R12ME4EB11BOSA1
DISTI # SP001671626
Infineon Technologies AGEconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray (Alt: SP001671626)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1000:€204.7900
  • 500:€207.6900
  • 100:€210.0900
  • 50:€213.7900
  • 25:€225.0900
  • 10:€227.4900
  • 1:€234.4900
FF600R12ME4EB11BOSA1
DISTI # 93AC7011
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A,Transistor Polarity:Dual N Channel,DC Collector Current:600A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes3
  • 25:$235.1200
  • 10:$238.4600
  • 5:$244.5300
  • 1:$250.5600
FF600R12ME4EB11BOSA1
DISTI # 726-FF600R12ME4EB11
Infineon Technologies AGIGBT Modules
RoHS: Compliant
8
  • 1:$248.0800
  • 5:$242.1100
  • 10:$236.1000
  • 25:$232.7900
FF600R12ME4EB11BOSA1
DISTI # 2986369
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A
RoHS: Compliant
3
  • 1:$349.4200
FF600R12ME4EB11BOSA1
DISTI # 2986369
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A3
  • 5:£169.0000
  • 1:£180.0000
Сурет Бөлім № Сипаттама
FP150R12KT4

Mfr.#: FP150R12KT4

OMO.#: OMO-FP150R12KT4

IGBT Modules
FP150R12KT4

Mfr.#: FP150R12KT4

OMO.#: OMO-FP150R12KT4-1190

Trans IGBT Module N-CH 1.2KV 150A 43-Pin (Alt: FP150R12KT4)
Қол жетімділік
Қор:
14
Тапсырыс бойынша:
1997
Саны енгізіңіз:
FF600R12ME4EB11BOSA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
248,08 $
248,08 $
5
242,11 $
1 210,55 $
10
236,10 $
2 361,00 $
25
232,79 $
5 819,75 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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