IRF8707PBF

Mfr. #:: IRF8707PBF
Өндіруші:: Infineon / IR
Сипаттама:: MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: IRF8707PBF Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF8707PBF Datasheet IRF8707PBF Datasheet (P4-P6)IRF8707PBF Datasheet (P7-P9)
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Өндіруші:: Infineon

Өнім санаты:: MOSFET

RoHS:: Y

Технология:: Си

Орнату стилі:: SMD/SMT

Пакет/қорап:: SO-8

Арналар саны:: 1 Channel

Транзистордың полярлығы:: N-арна

Vds - ағызу көзінің бұзылу кернеуі:: 30 V

Идентификатор - үздіксіз төгу тогы:: 11 A

Rds On - ағызу көзіне қарсылық:: 17.5 mOhms

Vgs - Шлюз көзі кернеуі:: 20 V

Qg - қақпа заряды:: 6.2 nC

Pd - қуаттың шығыны:: 2.5 W

Конфигурация:: Бойдақ

Қаптама:: Түтік

Биіктігі:: 1.75 mm

Ұзындығы:: 4.9 mm

Транзистор түрі:: 1 N-Channel

Ені:: 3.9 mm

Бренд:: Infineon / IR

Өнім түрі:: MOSFET

Зауыттық буманың саны:: 95

Ішкі санат:: MOSFETs

Бөлім # Бүркеншік аттар:: SP001560112

Бірлік салмағы:: 0.019048 oz

Tags: IRF870, IRF87, IRF8, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8707PBF Сипаттама

***Components: In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon

***ied Electronics & Automation: IRF8707PBF N-channel MOSFET Transistor,11 A, 30 V, 8-Pin SOIC

***p One Stop Global: Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC Tube

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W

***ical: Trans MOSFET N-CH 30V 11A 8-Pin SOIC Tube

***p One Stop Japan: Trans MOSFET N-CH 30V 11A 8-Pin SOIC

***ment14 APAC: 场效应管, N 通道, MOSFET, 30V, 11A, SOIC;

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***i-Key: MOSFET N-CH 30V 11A 8-SOIC

***ronik: N-CH 30V 11A 11,9mOhm SO8 RoHSconf

***ukat: N-Ch 30V 11A 2,5W 0,0119R SO8

***ark: Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.9mohm; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Total Gate Charge:6.2nC; No. of Pins:8 ;RoHS Compliant: Yes

***nell: MOSFET, N SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:11A; On State Resistance:0.0119ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:SO-8 (SOIC-8); Termination Type:SMD; Max Voltage Vds:30V; Power Dissipation Pd:2.5W; Pulse Current Idm:88A; Typ Charge Qrr @ Tj = 25°C:6.2nC; Voltage Vds:30V; Transistor Case Style:SO

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
IRF8707PBF DISTI # IRF8707PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRF8707PBF DISTI # 58M7423	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 11A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0119ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V RoHS Compliant: Yes	129	1:$0.5360 10:$0.4480 100:$0.2730 500:$0.2430 1000:$0.2110 2500:$0.1810 10000:$0.1670
IRF8707PBF DISTI # 942-IRF8707PBF	Infineon Technologies AG	MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC RoHS: Compliant	0
IRF8707PBF	International Rectifier	Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA RoHS: Compliant	5225	1000:$0.2000 500:$0.2100 100:$0.2200 25:$0.2300 1:$0.2400
IRF8707PBF DISTI # 495871	Infineon Technologies AG	MOSFET N-CHANNEL 30V 11A HEXFET SOIC8, PK	375	10:£0.4360 50:£0.3700 200:£0.3270 500:£0.2830
IRF8707TRPBF DISTI # IRF8707PBF-GURT	Infineon Technologies AG	N-Ch 30V 11A 2,5W 0,0119R SO8 RoHS: Compliant	0	50:€0.2050 100:€0.1650 500:€0.1450 2000:€0.1395
IRF8707PBF DISTI # 1551900	Infineon Technologies AG	MOSFET, N SO-8 RoHS: Compliant	0	1:$0.9970 10:$0.8340 100:$0.5090 1000:$0.3930 2500:$0.3580

Қосымша тауарлар

Сурет

Бөлім №

Сипаттама

Mfr.#: IRF8707TRPBF

OMO.#: OMO-IRF8707TRPBF

MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC Qg

Mfr.#: IRF8707TRPBF

OMO.#: OMO-IRF8707TRPBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 11A 8-SOIC

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 2000
Саны енгізіңіз:

IRF8707PBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

-ден бастаңыз

IRF870 11
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IRF8707PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes