SGH30N60RUFDTU

SGH30N60RUFDTU
Mfr. #:
SGH30N60RUFDTU
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
IGBT Transistors Dis Short Circuit Rated IGBT
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SGH30N60RUFDTU Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
IGBT транзисторлары
RoHS:
Y
Технология:
Си
Пакет/қорап:
TO-3P-3
Орнату стилі:
Тесік арқылы
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
600 V
Коллектор-эмиттер қанығу кернеуі:
2.2 V
Шықпа эмитентінің максималды кернеуі:
20 V
Үздіксіз коллектор тогы 25 С:
48 A
Pd - қуаттың шығыны:
235 W
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Серия:
SGH30N60RUFD
Қаптама:
Түтік
Үздіксіз коллектор ток Ic макс:
48 A
Биіктігі:
18.9 mm
Ұзындығы:
15.8 mm
Ені:
5 mm
Бренд:
ON Semiconductor / Fairchild
Үздіксіз коллекторлық ток:
48 A
Шлюз-эмиттер ағып кету тогы:
+/- 100 nA
Өнім түрі:
IGBT транзисторлары
Зауыттық буманың саны:
450
Ішкі санат:
IGBT
Бөлім # Бүркеншік аттар:
SGH30N60RUFDTU_NL
Бірлік салмағы:
0.225789 oz
Tags
SGH30N60RUFD, SGH30N60R, SGH30N6, SGH30, SGH3, SGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,Igbt,N-Chan+Diode,600V V(Br)Ces,48A I(C),To-247Var Rohs Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail
***rchild Semiconductor
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V, 24 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
***(Formerly Allied Electronics)
600V ULTRAFAST COPACK TRENCH IGBT IN A TO-220AB PACKAGE | Infineon IRGB4062DPBF
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***ure Electronics
IRGB4062DPbF Series 600 V 24 A N-Channel Bipolar Transistor IGBT - TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***ark
Dc Collector Current:48A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Msl:- Rohs Compliant: Yes |Infineon IRGB4062DPBF.
***ment14 APAC
IGBT, COPAK, TO-220; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:48A; Package / Case:TO-220; Power Dissipation Max:250W; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulsed Current Icm:96A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***nell
IGBT, COPAK, TO-247; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 48A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Max: 250W; Pulsed Current Icm: 96A; Rise Time: 22ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***-Wing Technology
Tube Through Hole Trench ROHS3Compliant IGBT Transistor 1.95V @ 15V 24A 48A 250W 89ns
***nell
IGBT,N CH,DIODE,600V,48A,D2PAK; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:250W
***ical
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***nell
IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Бөлім № Mfg. Сипаттама Қор Бағасы
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU-ND
ON SemiconductorIGBT 600V 48A 235W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube
Limited Supply - Call
  • 450:$3.1408
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: SGH30N60RUFDTU)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€2.0900
  • 10:€1.8900
  • 25:€1.8900
  • 50:€1.7900
  • 100:€1.7900
  • 500:€1.6900
  • 1000:€1.6900
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: SGH30N60RUFDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.8900
  • 900:$1.8900
  • 1800:$1.7900
  • 2700:$1.7900
  • 4500:$1.7900
SGH30N60RUFDTU
DISTI # 512-SGH30N60RUFDTU
ON SemiconductorIGBT Transistors Dis Short Circuit Rated IGBT
RoHS: Compliant
0
    Сурет Бөлім № Сипаттама
    SGH30N60

    Mfr.#: SGH30N60

    OMO.#: OMO-SGH30N60-1190

    Жаңа және түпнұсқа
    SGH30N60DUFDTU

    Mfr.#: SGH30N60DUFDTU

    OMO.#: OMO-SGH30N60DUFDTU-1190

    Жаңа және түпнұсқа
    SGH30N60RUF

    Mfr.#: SGH30N60RUF

    OMO.#: OMO-SGH30N60RUF-1190

    Жаңа және түпнұсқа
    SGH30N60RUF G30N60

    Mfr.#: SGH30N60RUF G30N60

    OMO.#: OMO-SGH30N60RUF-G30N60-1190

    Жаңа және түпнұсқа
    SGH30N60RUFD  G30N60RUF

    Mfr.#: SGH30N60RUFD G30N60RUF

    OMO.#: OMO-SGH30N60RUFD-G30N60RUF-1190

    Жаңа және түпнұсқа
    SGH30N60RUFD  G30N60RUFD

    Mfr.#: SGH30N60RUFD G30N60RUFD

    OMO.#: OMO-SGH30N60RUFD-G30N60RUFD-1190

    Жаңа және түпнұсқа
    SGH30N60RUFDTU(SG)

    Mfr.#: SGH30N60RUFDTU(SG)

    OMO.#: OMO-SGH30N60RUFDTU-SG--1190

    Жаңа және түпнұсқа
    SGH30N60RUFTU

    Mfr.#: SGH30N60RUFTU

    OMO.#: OMO-SGH30N60RUFTU-ON-SEMICONDUCTOR

    IGBT 600V 48A 235W TO3P
    SGH30N60TU

    Mfr.#: SGH30N60TU

    OMO.#: OMO-SGH30N60TU-1190

    Жаңа және түпнұсқа
    SGH30N60RUFDTU

    Mfr.#: SGH30N60RUFDTU

    OMO.#: OMO-SGH30N60RUFDTU-ON-SEMICONDUCTOR

    IGBT Transistors Dis Short Circuit Rated IGBT
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    5000
    Саны енгізіңіз:
    SGH30N60RUFDTU ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    3,86 $
    3,86 $
    10
    3,27 $
    32,70 $
    100
    2,84 $
    284,00 $
    250
    2,69 $
    672,50 $
    500
    2,42 $
    1 210,00 $
    1000
    2,04 $
    2 040,00 $
    2500
    1,94 $
    4 850,00 $
    5000
    1,86 $
    9 300,00 $
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