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DMN3190LDW-7

DMN3190LDW-7
Mfr. #:
DMN3190LDW-7
Өндіруші:
Diodes Incorporated
Сипаттама:
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
DMN3190LDW-7 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN3190LDW-7 DatasheetDMN3190LDW-7 Datasheet (P4-P5)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Біріктірілген диодтар
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
SOT-363-6
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
1 A
Rds On - ағызу көзіне қарсылық:
190 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.5 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
2 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
0.4 W
Конфигурация:
Қосарлы
Арна режимі:
Жақсарту
Қаптама:
Ролик
Серия:
DMN3190
Транзистор түрі:
2 N-Channel
Бренд:
Біріктірілген диодтар
Форвард өткізгіштік - Мин:
0.7 mS
Күз уақыты:
15.6 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
8.9 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
30.3 ns
Қосудың әдеттегі кешігу уақыты:
4.5 ns
Бірлік салмағы:
0.000212 oz
Tags
DMN319, DMN31, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
***ark
Mosfet Bvdss: 25V~30V Sot363 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMN3190LDW-7
***ure Electronics
DMN3190LDW: 30 V 190 mOhm Dual N-Channel Enhancement Mode Mosfet - SOT-363
***ment14 APAC
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1A; Source Voltage Vds:30V; On Resistance
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~150°C TJ 190m Ω @ 1.3A, 10V 2.8V @ 250μA MOSFET 2N-CH 30V 1A SOT363
***nell
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 320mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R
***nell
MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 2 Series; Automotive Qualification Standard: AEC-Q101; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***ure Electronics
Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363
***et
Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R
*** Source Electronics
Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 0.22A SOT363
***ment14 APAC
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Source Voltage Vds:30V; On
***nell
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 260mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363
***ser
MOSFETs- Power and Small Signal NFET 30V 3.2A 60MOHM
***Yang
Trans MOSFET N-CH 30V 2.6A 6-Pin SC-88 T/R - Tape and Reel
***ponent Stockers USA
1800 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 1.8A SC88/SC70-6
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-SC-88 ;RoHS Compliant: Yes
***ure Electronics
Trans MOSFET N-CH 30V 250A Automotive 6-Pin SOT-363 T/R
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***icontronic
Small Signal Field-Effect Transistor, 0.25A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Mosfet Bvdss: 25V~30V Sot363 T&r 3K
***nell
MOSFET, DUAL N-CH, 30V, 0.25A, 0.35W; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:250mA; On Resistance Rds(on):2.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V
***et
Trans MOSFET N/P-CH 30V/30V 0.65A/0.45A 6-Pin SOT-363 T/R
***ark
Mosfet, N/P-Ch, 30V, 0.65A, Sot363; Transistor Polarity:N And P Complement; Continuous Drain Current Id:650Ma; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Rohs Compliant: Yes |Diodes Inc. DMC3400SDW-13
***nsix Microsemi
Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N/P-CH, 30V, 0.65A, SOT363; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 650mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 310mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
Si1416EDH-T1-GE3 N-channel MOSFET Transistor; 3.9 A; 30 V; 6-Pin SOT-363
***ure Electronics
SI1416EDH Series N-Channel 30 V 3.9 A 12 nC Surface Mount Mosfet - SC-70-6
***nell
MOSFET, N-CH, 30V, 3.9A, SOT-363-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.8W; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)
Бөлім № Mfg. Сипаттама Қор Бағасы
DMN3190LDW-7
DISTI # DMN3190LDW-7DITR-ND		Diodes IncorporatedMOSFET 2N-CH 30V 1A SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.0880
DMN3190LDW-7
DISTI # DMN3190LDW-7DICT-ND		Diodes IncorporatedMOSFET 2N-CH 30V 1A SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1042
  • 500:$0.1360
  • 100:$0.2402
  • 10:$0.4080
  • 1:$0.5700
DMN3190LDW-7
DISTI # DMN3190LDW-7DIDKR-ND		Diodes IncorporatedMOSFET 2N-CH 30V 1A SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1042
  • 500:$0.1360
  • 100:$0.2402
  • 10:$0.4080
  • 1:$0.5700
DMN3190LDW-7
DISTI # DMN3190LDW-7		Diodes IncorporatedTrans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R (Alt: DMN3190LDW-7)
RoHS: Compliant
Min Qty: 9000
Container: Tape and Reel		Asia - 0
  • 9000:$0.0836
  • 18000:$0.0799
  • 27000:$0.0765
  • 45000:$0.0744
  • 90000:$0.0734
  • 225000:$0.0715
  • 450000:$0.0697
DMN3190LDW-7
DISTI # DMN3190LDW-7		Diodes IncorporatedTrans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: DMN3190LDW-7)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0498
  • 6000:$0.0474
  • 12000:$0.0451
  • 18000:$0.0431
  • 30000:$0.0421
DMN3190LDW-7
DISTI # 70550289		Diodes IncorporatedMOSFET Dual N-Ch 30V 1A Enhanc. SOT363
RoHS: Compliant		0
  • 250:$0.1250
  • 500:$0.0910
  • 1250:$0.0790
  • 2500:$0.0730
DMN3190LDW-7
DISTI # 621-DMN3190LDW-7		Diodes IncorporatedMOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
RoHS: Compliant		18789
  • 1:$0.4500
  • 10:$0.2890
  • 100:$0.1240
  • 1000:$0.0950
  • 3000:$0.0720
  • 9000:$0.0640
  • 24000:$0.0600
DMN3190LDW-13
DISTI # 621-DMN3190LDW-13		Diodes IncorporatedMOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
RoHS: Compliant		0
  • 10000:$0.0640
DMN3190LDW-7
DISTI # 8270480P		Zetex / Diodes IncMOSFET DUAL N-CH 30V 1A ENHANC. SOT363, RL15000
  • 250:£0.1020
  • 500:£0.0830
  • 1250:£0.0770
  • 2500:£0.0760
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Қол жетімділік
Қор:
146
Тапсырыс бойынша:
2129
Саны енгізіңіз:
DMN3190LDW-7 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,44 $
0,44 $
10
0,29 $
2,89 $
100
0,12 $
12,40 $
1000
0,10 $
95,00 $
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