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BSC350N20NSFDATMA1
BSC350N20NSFDATMA1
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BSC350N20NSFDATMA1

Mfr. #:
BSC350N20NSFDATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET DIFFERENTIATED MOSFETS
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC350N20NSFDATMA1 Деректер тізімі
ECAD Model:

Қол жетімділік

Қор:
Available
Тапсырыс бойынша:
1987
Саны енгізіңіз:
BSC350N20NSFDATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
2,83 $
2,83 $
10
2,41 $
24,10 $
100
1,92 $
192,00 $
500
1,68 $
840,00 $
1000
1,39 $
1 390,00 $
2500
1,30 $
3 250,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
200 V
Идентификатор - үздіксіз төгу тогы:
35 A
Rds On - ағызу көзіне қарсылық:
31 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
30 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
150 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Серия:
OptiMOS жылдам диод
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
29 S
Күз уақыты:
4.8 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
4.8 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
17 ns
Қосудың әдеттегі кешігу уақыты:
8 ns
Бөлім # Бүркеншік аттар:
BSC350N20NSFD SP001108124
Tags
BSC3, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R
***ark
Mosfet, N-Ch, 200V, 35A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.031Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 35A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$1.3785
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 35A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5000In Stock
  • 1000:$1.5837
  • 500:$1.9114
  • 100:$2.4575
  • 10:$3.0580
  • 1:$3.3900
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 35A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5000In Stock
  • 1000:$1.5837
  • 500:$1.9114
  • 100:$2.4575
  • 10:$3.0580
  • 1:$3.3900
BSC350N20NSFDATMA1
DISTI # BSC350N20NSFDATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 27A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC350N20NSFDATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.2900
  • 10000:$1.2900
  • 20000:$1.1900
  • 30000:$1.1900
  • 50000:$1.1900
BSC350N20NSFDATMA1
DISTI # 24AC4562		Infineon Technologies AGMOSFET, N-CH, 200V, 35A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes2807
  • 1:$2.8400
  • 10:$2.4100
  • 25:$2.2500
  • 50:$2.0900
  • 100:$1.9300
  • 250:$1.8100
  • 500:$1.6900
  • 1000:$1.4000
BSC350N20NSFDATMA1
DISTI # 726-BSC350N20NSFDATM		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		2953
  • 1:$2.8400
  • 10:$2.4100
  • 100:$1.9300
  • 500:$1.6900
  • 1000:$1.4000
  • 2500:$1.3100
  • 5000:$1.2600
BSC350N20NSFDATMA1
DISTI # 2770033		Infineon Technologies AGMOSFET, N-CH, 200V, 35A, TDSON
RoHS: Compliant		3897
  • 1:£2.5000
  • 10:£1.8700
  • 100:£1.5100
  • 250:£1.4200
  • 500:£1.3200
BSC350N20NSFDATMA1
DISTI # 2770033		Infineon Technologies AGMOSFET, N-CH, 200V, 35A, TDSON
RoHS: Compliant		2807
  • 1:$5.4100
  • 10:$4.8800
  • 100:$3.9200
  • 500:$3.0500
  • 1000:$2.5300
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OMO.#: OMO-PIC18F65K40-I-MR-MICROCHIP-TECHNOLOGY

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CGA6M3X7S2A475K200AB

Mfr.#: CGA6M3X7S2A475K200AB

OMO.#: OMO-CGA6M3X7S2A475K200AB-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 4.7uF 100volts X7S +/-10%
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Mfr.#: FDP075N15A-F102

OMO.#: OMO-FDP075N15A-F102-ON-SEMICONDUCTOR

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TPS23861PWR

Mfr.#: TPS23861PWR

OMO.#: OMO-TPS23861PWR-TEXAS-INSTRUMENTS

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