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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| FGW15N120HD DISTI # 49X9255 | Fuji Electric Co Ltd | IGBT, SINGLE, 1.2KV, 31A, TO-247-3,DC Collector Current:31A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:155W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes | 0 | |
| FGW15N120HD DISTI # 70241437 | Fuji Electric Co Ltd | IC,IGBT,High-Speed V-Series,1200V,15A,1550W,TP-247-P2 RoHS: Compliant | 0 |
|
| FGW15N120H DISTI # FE0000000000862 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FGW15N120H-S31PP-P2 DISTI # FE0000000001754 | Fuji Electric Co Ltd | DISCRETE IGBT- High Speed V RoHS: Compliant | 0 in Stock0 on Order |
|
| FGW15N120HD-S31PP-P2 DISTI # FE0000000000863 | Fuji Electric Co Ltd | DISCRETE IGBT- High Speed V RoHS: Compliant | 0 in Stock0 on Order |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: FGW15N120H OMO.#: OMO-FGW15N120H-1190 |
Power Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FGW15N120HD OMO.#: OMO-FGW15N120HD-1190 |
IGBT, SINGLE, 1.2KV, 31A, TO-247-3, DC Collector Current:31A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:3 |
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Mfr.#: FGW15N120VD OMO.#: OMO-FGW15N120VD-1190 |
IGBT, SINGLE, 1.2KV, 28A, TO-247-3, DC Collector Current:28A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins: |
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Mfr.#: FGW15N40 OMO.#: OMO-FGW15N40-1190 |
Жаңа және түпнұсқа |
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Mfr.#: FGW15N40A OMO.#: OMO-FGW15N40A-1190 |
Жаңа және түпнұсқа |