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SUP90140E-GE3

SUP90140E-GE3
Mfr. #:
SUP90140E-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 200V Vds 20V Vgs TO-220
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SUP90140E-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUP90140E-GE3 DatasheetSUP90140E-GE3 Datasheet (P4-P6)SUP90140E-GE3 Datasheet (P7-P8)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-220-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
200 V
Идентификатор - үздіксіз төгу тогы:
90 A
Rds On - ағызу көзіне қарсылық:
13.8 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
96 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
375 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
ThunderFET
Қаптама:
Түтік
Серия:
SUP
Транзистор түрі:
1 N-Channel
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
75 S
Күз уақыты:
80 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
112 ns
Зауыттық буманың саны:
500
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
35 ns
Қосудың әдеттегі кешігу уақыты:
13 ns
Бірлік салмағы:
0.063493 oz
Tags
SUP901, SUP90, SUP9, SUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
VISHAY SUP90140E-GE3 MOSFET Transistor, N Channel, 90 A, 200 V, 0.0138 ohm, 10 V, 4 VNew
***ure Electronics
N-Channel 200 V 17 mOhm 375 W ThunderFET Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB
***nell
MOSFET, N-CH, 200V, 90A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V
***itex
Transistor: N-MOSFET; unipolar; 200V; 9A; 0.4ohm; 0.57W; -55+150 deg.C; THT; TO220
***ical
Trans MOSFET N-CH Si 200V 9.3A Automotive 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 36 W
***roFlash
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 200V, 9.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.3A; Junction to Case Thermal Resistance A:1.83°C/W; Package / Case:TO-220AB; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V
***itex
Transistor: N-MOSFET; unipolar; 200V; 18A; 0.15ohm; 150W; -55+175 deg.C; THT; TO220
***eco
200 Volt 18 Amp Single N-Channel HEXFET Power MOSFET TO-220 Fast Switching
***ure Electronics
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 200V 18A 150mΩ 175°C TO-220 IRF640N-PBF
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
*** Electronics
IRF640NPBF Trans MOSFET N-CH 200V 18A 3-Pin (3+Tab) TO-220AB RoHS
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):150mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 150 W
***roFlash
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***nell
MOSFET, N, 200V, 18A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.15ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:72A; No. of Pins:3; Power Dissipation:150W; Power, Pd:150W; Thermal Resistance, Junction to Case A:1°C/W; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS
*** Source Electronics
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 65A TO-220AB
***ure Electronics
Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 200V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):19.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:140mJ; Capacitance Ciss Typ:4600pF; Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-220AB; Power Dissipation Pd:190W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 65 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 19.7 / Gate-Source Voltage V = 30 / Fall Time ns = 31 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 33 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 330
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 200V 18A 3-Pin (3+Tab) TO-220AB
*** Stop Electro
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:TO-220; Power Dissipation Pd:125W; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
*** Source Electronics
MOSFET N-CH 200V 9A TO-220AB / Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB
***ure Electronics
Single N-Channel 200 V 0.4 O 43 nC Power Mosfet - TO-220-3 (TO-220AB)
*** Electronics
Transistor: N-MOSFET; unipolar; 200V; 5.7A; 74W; TO220AB
*** electronic
Transistor MOSFET N-Ch. 9A/200V TO220
***ark
N Channel Mosfet, 200V, 9A; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; On Resistance Rds(On):0.4Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pinsrohs Compliant: No
***roFlash
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
Single N-Channel 200 V 1.5 Ohms Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 200V 3.3A 3-Pin (3+Tab) TO-220AB
***enic
200V 3.3A 1.5´Î@10V2A 36W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 200V, 3.3A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:36W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:3.3A; Junction to Case Thermal Resistance A:3.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:10A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Бөлім № Mfg. Сипаттама Қор Бағасы
SUP90140E-GE3
DISTI # V99:2348_14664664		Vishay IntertechnologiesTrans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB400
  • 2500:$1.6250
  • 500:$1.9850
  • 100:$2.2820
  • 25:$2.7110
  • 10:$2.7650
  • 1:$3.6465
SUP90140E-GE3
DISTI # V36:1790_14664664		Vishay IntertechnologiesTrans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB0
  • 500000:$1.6360
  • 250000:$1.6370
  • 50000:$1.6740
  • 5000:$1.7230
  • 500:$1.7300
SUP90140E-GE3
DISTI # SUP90140E-GE3-ND		Vishay SiliconixMOSFET N-CH 200V 90A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		523In Stock
  • 5000:$1.6128
  • 2500:$1.6758
  • 500:$2.0916
  • 100:$2.4570
  • 25:$2.8352
  • 10:$2.9990
  • 1:$3.3400
SUP90140E-GE3
DISTI # 25891398		Vishay IntertechnologiesTrans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB400
  • 4:$3.6465
SUP90140E-GE3
DISTI # SUP90140E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 90A 3-Pin TO-220AB (Alt: SUP90140E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 50
  • 1000:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.4900
  • 25:€1.6900
  • 10:€2.0900
  • 1:€2.6900
SUP90140E-GE3
DISTI # SUP90140E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 90A 3-Pin TO-220AB - Tape and Reel (Alt: SUP90140E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 3000:$1.4900
  • 5000:$1.4900
  • 1000:$1.5900
  • 2000:$1.5900
  • 500:$1.6900
SUP90140E-GE3
DISTI # 86Y1095		Vishay IntertechnologiesMOSFET, N-CH, 200V, 90A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0138ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes482
  • 500:$2.2400
  • 100:$2.3100
  • 50:$2.4800
  • 25:$2.6400
  • 10:$2.8100
  • 1:$3.3900
SUP90140E-GE3
DISTI # 78-SUP90140E-GE3		Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs TO-220
RoHS: Compliant		667
  • 1:$3.3600
  • 10:$2.7800
  • 100:$2.2900
  • 250:$2.2200
  • 500:$1.9900
  • 1000:$1.6700
  • 2500:$1.5900
  • 5000:$1.5300
SUP90140EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		500
    SUP90140E-GE3
    DISTI # 2576517    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 90A, TO-220AB-3
    RoHS: Compliant    		482
    • 2500:$2.5400
    • 500:$3.1600
    • 100:$3.7100
    • 25:$4.2800
    • 10:$4.5200
    • 1:$5.0300
    SUP90140E-GE3
    DISTI # 2576517    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 90A, TO-220AB-3494
    • 500:£1.3800
    • 250:£1.5200
    • 100:£1.5800
    • 10:£1.9100
    • 1:£2.8800
    SUP90140E-GE3Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs TO-220Americas -
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      Қол жетімділік
      Қор:
      627
      Тапсырыс бойынша:
      2610
      Саны енгізіңіз:
      SUP90140E-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
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