NTMS10P02R2G

Mfr. #:: NTMS10P02R2G
Өндіруші:: ON Semiconductor
Сипаттама:: MOSFET 20V 10A P-Channel
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: NTMS10P02R2G Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NTMS10P02R2G Datasheet NTMS10P02R2G Datasheet (P4-P6)
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Өндіруші:: ON Жартылай өткізгіш

Өнім санаты:: MOSFET

RoHS:: Y

Технология:: Си

Орнату стилі:: SMD/SMT

Пакет/қорап:: SOIC-8

Арналар саны:: 1 Channel

Транзистордың полярлығы:: P-арна

Vds - ағызу көзінің бұзылу кернеуі:: 20 V

Идентификатор - үздіксіз төгу тогы:: 8.8 A

Rds On - ағызу көзіне қарсылық:: 20 mOhms

Vgs th - Gate-Source шекті кернеуі:: 600 mV

Vgs - Шлюз көзі кернеуі:: 2.5 V

Qg - қақпа заряды:: 48 nC

Ең төменгі жұмыс температурасы:: - 55 C

Максималды жұмыс температурасы:: + 150 C

Pd - қуаттың шығыны:: 2.5 W

Конфигурация:: Бойдақ

Арна режимі:: Жақсарту

Қаптама:: Ролик

Биіктігі:: 1.5 mm

Ұзындығы:: 5 mm

Серия:: NTMS10P02

Транзистор түрі:: 1 P-Channel

Түрі:: MOSFET

Ені:: 4 mm

Бренд:: ON Жартылай өткізгіш

Форвард өткізгіштік - Мин:: 30 S

Күз уақыты:: 110 ns, 125 ns

Өнім түрі:: MOSFET

Көтеру уақыты:: 40 ns, 100 ns

Зауыттық буманың саны:: 2500

Ішкі санат:: MOSFETs

Өшірудің әдеттегі кешігу уақыты:: 100 ns, 110 ns

Қосудың әдеттегі кешігу уақыты:: 25 ns

Бірлік салмағы:: 0.006596 oz

Tags: NTMS10P02R2, NTMS10P02R, NTMS1, NTMS, NTM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMS10P02R2G Сипаттама

***ure Electronics: P-Channel 20 V 14 mOhm 2.5 W Surface Mount Power MOSFET - SOIC-8

***emi: Single P−Channel Enhancement−Mode Power MOSFET -20V, -10A, 14mΩ

***(Formerly Allied Electronics): NTMS10P02R2G P-channel MOSFET Transistor, 6.4 A, 20 V, 8-Pin SOIC | ON Semiconductor NTMS10P02R2G

***th Star Micro: NTMS10P02: Power MOSFET 20V 10A 14 mOhm Single P-Channel SO-8

***Yang: Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R - Tape and Reel

***nell: MOSFET, P-CH, -20V, -8.8A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -880mV; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ

***Yang: Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R - Tape and Reel

***enic: 20V 11A 14m´Î@4.5V11A 2.5W 1.5V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Source Voltage Vds:-20V; On Resistance

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

***nell: MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -830mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -830mV; Voltage Vgs Rds on Measurement: -4.5V

***ure Electronics: ZXMN2A02 Series N-Channel 20 V 10.2 A 2.5 W Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 20V 10.2A Automotive 8-Pin SOIC T/R

***S: French Electronic Distributor since 1988

***i-Key: MOSFET N-CH 20V 10.5A 8-SOIC

***Yang: MOSFET Single N-Ch FET Enhancement Mode - Bulk

***S: French Electronic Distributor since 1988

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:10.5A; On Resistance, Rds(on):0.0135ohm; Rds(on) Test Voltage, Vgs:4.5V; Drain-Source Breakdown Voltage:20V RoHS Compliant: Yes

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8

***ponent Sense: Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC

***ical: Trans MOSFET N-CH 20V 9.4A 8-Pin SOIC N T/R

***hard Electronics: ON SEMICONDUCTOR - FDS6898A - DUAL N CHANNEL MOSFET, 20V, SOIC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.4A; Current Id Max: 9.4A; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.01ohm; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 4.5V

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8

***enic: 20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***et Japan: Transistor MOSFET Array Dual P-CH 20V 9A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 20 V 0.018 Ohm 42 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.1 mm); Dual P-Channel MOSFET

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V;

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
NTMS10P02R2G DISTI # 24327549	ON Semiconductor	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R RoHS: Compliant	2500	2500:$0.5504
NTMS10P02R2G DISTI # NTMS10P02R2GOSCT-ND	ON Semiconductor	MOSFET P-CH 20V 8.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3678In Stock	1000:$0.7899 500:$1.0006 100:$1.2902 10:$1.6330 1:$1.8400
NTMS10P02R2G DISTI # NTMS10P02R2GOSDKR-ND	ON Semiconductor	MOSFET P-CH 20V 8.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3678In Stock	1000:$0.7899 500:$1.0006 100:$1.2902 10:$1.6330 1:$1.8400
NTMS10P02R2G DISTI # NTMS10P02R2GOSTR-ND	ON Semiconductor	MOSFET P-CH 20V 8.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.7158
NTMS10P02R2G DISTI # C1S541900478792	ON Semiconductor	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R RoHS: Compliant	2500	2500:$0.6690
NTMS10P02R2G DISTI # NTMS10P02R2G	ON Semiconductor	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMS10P02R2G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5539 5000:$0.5509 10000:$0.5439 15000:$0.5369 25000:$0.5229
NTMS10P02R2G DISTI # NTMS10P02R2G	ON Semiconductor	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R (Alt: NTMS10P02R2G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.6190 5000:$0.5952 7500:$0.5732 12500:$0.5527 25000:$0.5336 62500:$0.5158 125000:$0.5074
NTMS10P02R2G DISTI # 61K1292	ON Semiconductor	P CHANNEL MOSFET, -20V, 10A, SOIC, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:10mA,Drain Source Voltage Vds:-20V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-880mV , RoHS Compliant: Yes	0	1:$1.6300 25:$1.3100 100:$1.0000 250:$0.9720 500:$0.8840 1000:$0.6980 2500:$0.6190 5000:$0.6000
NTMS10P02R2G DISTI # 81Y7051	ON Semiconductor	MOSFET, P-CH, -20V, -8.8A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.8A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-880mV,Power , RoHS Compliant: Yes	2544	1:$1.5300 10:$1.3100 25:$1.2100 50:$1.1000 100:$1.0000 250:$0.9420 500:$0.8840 1000:$0.6980
NTMS10P02R2G DISTI # 70467536	ON Semiconductor	NTMS10P02R2G P-channel MOSFET Transistor,6.4 A,20 V,8-Pin SOIC RoHS: Compliant	0	20:$1.5500 50:$1.4700 100:$1.4000 500:$1.3300
NTMS10P02R2G DISTI # 863-NTMS10P02R2G	ON Semiconductor	MOSFET 20V 10A P-Channel RoHS: Compliant	5071	1:$1.5300 10:$1.3100 100:$1.0000 500:$0.8840 1000:$0.6980 2500:$0.6190 10000:$0.5950
NTMS10P02R2 DISTI # 863-NTMS10P02R2	ON Semiconductor	MOSFET 20V 10A P-Channel RoHS: Not compliant	0
NTMS10P02R2G	ON Semiconductor	RoHS: Not Compliant	57343	1000:$0.8400 500:$0.8800 100:$0.9200 25:$0.9600 1:$1.0300
NTMS10P02R2G	ON Semiconductor	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.8A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	801	367:$0.4875 65:$0.5460 1:$1.5600
NTMS10P02R2G	ON Semiconductor	RoHS: Compliant	Europe - 7500
NTMS10P02R2G	ON Semiconductor	INSTOCK	3445
NTMS10P02R2G DISTI # XSFP00000058270	ON SEMICONDUCTOR	SmallSignalField-EffectTransistor,8.8AI(D),20V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant	3365	2500:$0.7467 3365:$0.7000
NTMS10P02R2G DISTI # 2533197	ON Semiconductor	MOSFET, P-CH, -20V, -8.8A, SOIC-8 RoHS: Compliant	2689	5:£1.2200 25:£1.0500 100:£0.8080 250:£0.7600 500:£0.7130
NTMS10P02R2G DISTI # 2533197	ON Semiconductor	MOSFET, P-CH, -20V, -8.8A, SOIC-8 RoHS: Compliant	2544	1:$2.4300 10:$2.0700 100:$1.5900 500:$1.4000 1000:$1.1100 2500:$0.9800 10000:$0.9420

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: AD8515AKSZ-REEL7 OMO.#: OMO-AD8515AKSZ-REEL7	Operational Amplifiers - Op Amps 1.8V Lo Pwr CMOS RRIO
	Mfr.#: STD1802T4 OMO.#: OMO-STD1802T4	Bipolar Transistors - BJT LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
	Mfr.#: ADM6320CZ29ARJZ-R7 OMO.#: OMO-ADM6320CZ29ARJZ-R7	Supervisory Circuits Watchdog w/ MR IC Low/Open Drain
	Mfr.#: IRFR5410TRPBF OMO.#: OMO-IRFR5410TRPBF	MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
	Mfr.#: MBR0520LT1G OMO.#: OMO-MBR0520LT1G	Schottky Diodes & Rectifiers 0.5A 20V
	Mfr.#: LM27313XMF/NOPB OMO.#: OMO-LM27313XMF-NOPB	Switching Voltage Regulators 1.6 MHZ BOOST CONVERTER
	Mfr.#: XC6206P332MR-G OMO.#: OMO-XC6206P332MR-G	LDO Voltage Regulators 1uA Low Quiescent 3 Terminal, Low ESR Cap. Compatible, Voltage Regulator
	Mfr.#: TCA9554ADBR OMO.#: OMO-TCA9554ADBR	Interface - I/O Expanders Remote 8-Bit I2C and SMBus I/O Expander 16-SSOP -40 to 85
	Mfr.#: TCA9535DBR OMO.#: OMO-TCA9535DBR	Interface - I/O Expanders Remote 16bit I2C LP I/O Expander
	Mfr.#: AD8515AKSZ-REEL7 OMO.#: OMO-AD8515AKSZ-REEL7-ANALOG-DEVICES-INC-ADI	Precision Amplifiers 1.8V Lo Pwr CMOS RRIO

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 1986
Саны енгізіңіз:

NTMS10P02R2G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~1,53 $~~; ~~1,53 $~~

10: ~~1,31 $~~; ~~13,10 $~~

100: ~~1,00 $~~; ~~100,00 $~~

500: ~~0,88 $~~; ~~442,00 $~~

1000: ~~0,70 $~~; ~~698,00 $~~

2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.

-ден бастаңыз

NTMS10P02R2 4
NTMS10P02R 5
NTMS1 6
NTMS 115
NTM 810

NTMS10P02R2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes