FDS5692Z

Mfr. #:: FDS5692Z
Өндіруші:: ON Semiconductor / Fairchild
Сипаттама:: MOSFET 50V N-Ch UltraFET PowerTrench MOSFET
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: FDS5692Z Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: FDS5692Z Datasheet FDS5692Z Datasheet (P4-P6)
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Өндіруші:: ON Жартылай өткізгіш

Өнім санаты:: MOSFET

RoHS:: Y

Технология:: Си

Орнату стилі:: SMD/SMT

Пакет/қорап:: SO-8

Арналар саны:: 1 Channel

Транзистордың полярлығы:: N-арна

Vds - ағызу көзінің бұзылу кернеуі:: 50 V

Идентификатор - үздіксіз төгу тогы:: 5.8 A

Rds On - ағызу көзіне қарсылық:: 20 mOhms

Vgs - Шлюз көзі кернеуі:: 20 V

Ең төменгі жұмыс температурасы:: - 55 C

Максималды жұмыс температурасы:: + 150 C

Pd - қуаттың шығыны:: 2.5 W

Конфигурация:: Бойдақ

Арна режимі:: Жақсарту

Қаптама:: Ролик

Биіктігі:: 1.75 mm

Ұзындығы:: 4.9 mm

Транзистор түрі:: 1 N-Channel

Түрі:: MOSFET

Ені:: 3.9 mm

Бренд:: ON Semiconductor / Fairchild

Күз уақыты:: 6 ns

Өнім түрі:: MOSFET

Көтеру уақыты:: 5 ns

Зауыттық буманың саны:: 2500

Ішкі санат:: MOSFETs

Өшірудің әдеттегі кешігу уақыты:: 27 ns

Қосудың әдеттегі кешігу уақыты:: 9 ns

Бірлік салмағы:: 0.006596 oz

Tags: FDS569, FDS56, FDS5, FDS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS5692Z Сипаттама

***et: Trans MOSFET N-CH 50V 5.8A 8-Pin SOIC N T/R

***ser: MOSFETs 50V N-Ch UltraFET PowerTrench MOSFET

***ter Electronics: 50V,5.8A,24OHM NCH ULTRAFET TRENCH MOSFET

***inecomponents.com: This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r_DS(on) and fast switching speed.

***et: Transistor MOSFET Array Dual N-CH 40V 9A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 40 V 24 mOhm Surface Mount Enhancement Mode Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 40V 7A Automotive 8-Pin SO T/R

***(Formerly Allied Electronics): MOSFET Dual N-Ch 40V 9A Enhanc. SOIC8

***ark: Mosfet, Dual, N-Ch, 40V, 7A Rohs Compliant: Yes

***des Inc SCT: 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

*** Stop Electro: Small Signal Field-Effect Transistor

***emi: N-Channel PowerTrench® MOSFET, 60V, 7A, 28mΩ

***ure Electronics: N-Channel 60 V 28 mOhm PowerTrench Mosfet SOIC-8

***et Europe: Trans MOSFET N-CH 60V 7A 8-Pin SOIC N T/R

***nell: MOSFET, N-CH, 60V, 7A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.022ohm; Rds(on; Available until stocks are exhausted Alternative available

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***i-Key: MOSFET N/P-CH 40V 7.5A/6A 8SOIC

***ark: MOSFET, DUAL, NP, SO-8; Transistor type:Enhancement; Voltage, Vds typ:40V; Current, Id cont:7.5A; Resistance, Rds on:31mohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4V; Case style:SOIC; Current, Id cont N RoHS Compliant: Yes

***nell: MOSFET, DUAL, NP, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 4V; Power Dis

***ponent Sense: Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)

*** Electronics: SI7850DP-T1-E3 ; ROHS ; V ISHAY/SILICONIX ; MOSFET N-CH 60V POWERPAK 8-SOIC

***ure Electronics: Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 0.018Ohm,ID 6.2A,PowerPAK SO-8,PD 1.8W,-55C

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.8W; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Package / Case:SOIC PowerPAK; Power Dissipation Pd:1.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.2A; Resistance, Rds On:0.031ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:27nC; No. of Pins:8; Power Dissipation:1.8W; Power, Pd:1.8W; Power, Ptot:1.8W; Quantity, Reel:3000; Resistance, Rds on Max:0.022ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.3°C/W; Voltage, Vds Max:60V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:1V; Width, External:6.2mm; Width, Tape:12mm

***ure Electronics: Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa

***emi: Dual N-Channel PowerTrench® MOSFET, Logic Level, 40V, 6A, 29mΩ

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.029ohm; Rds(on) Test Voltage, Vgs:1.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***trelec: Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 900

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
FDS5692Z DISTI # FDS5692ZTR-ND	ON Semiconductor	MOSFET N-CH 50V 5.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDS5692Z DISTI # FDS5692ZCT-ND	ON Semiconductor	MOSFET N-CH 50V 5.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDS5692Z DISTI # FDS5692ZDKR-ND	ON Semiconductor	MOSFET N-CH 50V 5.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDS5692Z DISTI # FDS5692Z	ON Semiconductor	Trans MOSFET N-CH 50V 5.8A 8-Pin SOIC N T/R - Bulk (Alt: FDS5692Z) RoHS: Compliant Min Qty: 338 Container: Bulk	Americas - 0	3380:$0.9129 1690:$0.9359 1014:$0.9479 676:$0.9609 338:$0.9669
FDS5692Z DISTI # 512-FDS5692Z	ON Semiconductor	MOSFET 50V N-Ch UltraFET PowerTrench MOSFET RoHS: Compliant	0
FDS5692Z	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 5.8A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	8231	1000:$0.9700 500:$1.0300 100:$1.0700 25:$1.1100 1:$1.2000

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: FDS5009EC1 OMO.#: OMO-FDS5009EC1-1190	Жаңа және түпнұсқа
	Mfr.#: FDS5009M OMO.#: OMO-FDS5009M-1190	Жаңа және түпнұсқа
	Mfr.#: FDS5351 OMO.#: OMO-FDS5351-ON-SEMICONDUCTOR	MOSFET N-CH 60V 6.1A 8-SOIC
	Mfr.#: FDS5612-NL OMO.#: OMO-FDS5612-NL-1190	Жаңа және түпнұсқа
	Mfr.#: FDS5672A OMO.#: OMO-FDS5672A-1190	Жаңа және түпнұсқа
	Mfr.#: FDS5682-NL OMO.#: OMO-FDS5682-NL-1190	Жаңа және түпнұсқа
	Mfr.#: FDS5690 OMO.#: OMO-FDS5690-ON-SEMICONDUCTOR	MOSFET N-CH 60V 7A 8SOIC
	Mfr.#: FDS5690_F095 OMO.#: OMO-FDS5690-F095-1190	Жаңа және түпнұсқа
	Mfr.#: FDS58949-NL OMO.#: OMO-FDS58949-NL-1190	Жаңа және түпнұсқа
	Mfr.#: FDS5672_F095 OMO.#: OMO-FDS5672-F095-ON-SEMICONDUCTOR	MOSFET N-CH

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 1000
Саны енгізіңіз:

FDS5692Z ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

-ден бастаңыз

FDS569 9
FDS56 29
FDS5 45
FDS 1298

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FDS5692Z

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes