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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| IPB039N10N3GATMA1 DISTI # V36:1790_06377391 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
| IPB039N10N3GATMA1 DISTI # V72:2272_06377391 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant | 0 | |
| IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| IPB039N10N3GXT DISTI # IPB039N10N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB039N10N3GATMA1 DISTI # 47W3465 | Infineon Technologies AG | MOSFET, N CHANNEL, 100V, 160A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes | 0 |
|
| IPB039N10N3GATMA1 DISTI # 726-IPB039N10N3GATMA | Infineon Technologies AG | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 RoHS: Compliant | 0 |
|
| IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,100V,160A,214W,PG-TO263-7 | 28 |
|
| IPB039N10N3GATMA1 DISTI # 2212838 | Infineon Technologies AG | MOSFET, N-CH, 100V, 160A, TO263-7 RoHS: Compliant | 0 |
|
| IPB039N10N3GATMA1 DISTI # 2212838 | Infineon Technologies AG | MOSFET, N-CH, 100V, 160A, TO263-7 | 0 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: IPB039N10N3 G OMO.#: OMO-IPB039N10N3-G |
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 |
|
Mfr.#: IPB039N10N3GATMA1 OMO.#: OMO-IPB039N10N3GATMA1 |
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 |
|
|
Mfr.#: IPB039N10N3GE8187ATMA1 OMO.#: OMO-IPB039N10N3GE8187ATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPB039N10N3GE8187ATMA1 |
MOSFET N-CH 100V 160A TO263-7 |
|
|
Mfr.#: IPB039N10N3GATMA1 |
MOSFET N-CH 100V 160A TO263-7 |
|
Mfr.#: IPB039N10N3GXT OMO.#: OMO-IPB039N10N3GXT-1190 |
Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) |
|
|
Mfr.#: IPB039N10N3G OMO.#: OMO-IPB039N10N3G-1190 |
Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA |
|
|
Mfr.#: IPB039N10N3GATMA1 , 2SD1 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPB039N10N3GE8197ATMA1 |
Жаңа және түпнұсқа |
|
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Mfr.#: IPB039N10N3 G OMO.#: OMO-IPB039N10N3-G-126 |
IGBT Transistors MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 |