SI7137DP-T1-GE3

SI7137DP-T1-GE3
Mfr. #:
SI7137DP-T1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET -20V Vds 12V Vgs PowerPAK SO-8
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SI7137DP-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7137DP-T1-GE3 DatasheetSI7137DP-T1-GE3 Datasheet (P4-P6)SI7137DP-T1-GE3 Datasheet (P7-P9)SI7137DP-T1-GE3 Datasheet (P10-P12)SI7137DP-T1-GE3 Datasheet (P13)
ECAD Model:
Көбірек ақпарат:
SI7137DP-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
E
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PowerPAK-SO-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
P-арна
Vds - ағызу көзінің бұзылу кернеуі:
20 V
Идентификатор - үздіксіз төгу тогы:
60 A
Rds On - ағызу көзіне қарсылық:
1.6 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.4 V
Vgs - Шлюз көзі кернеуі:
12 V
Qg - қақпа заряды:
585 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
104 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
TrenchFET
Қаптама:
Ролик
Серия:
SI7
Транзистор түрі:
1 P-Channel
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
95 S
Күз уақыты:
72 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
14 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
230 ns
Қосудың әдеттегі кешігу уақыты:
20 ns
Бөлім # Бүркеншік аттар:
SI7137DP-GE3
Бірлік салмағы:
0.017870 oz
Tags
SI7137DP-T1, SI7137DP-T, SI7137DP, SI7137D, SI7137, SI713, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***n
    T***n
    LK

    wow.. it amazing product. spark gap about 2cm..!i use to make this,1* 400kv boost module 1* 18650 baterry 1* 18650 usb charging circuit1* led and 220ohm resister.2* screw nuts2* switches 1* 25cm long pvc pipe and end caps works pritty well. not deathly, but it hurts. try you guys..!!

    2019-01-15
    A***v
    A***v
    RU

    The parcel was a national team. It came all that ordered. Went almost a week for this minus star. I will check in the case i will add a review, or even with these details that is still a lottery.

    2019-05-13
***ure Electronics
Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
***ark
MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V ;RoHS Compliant: Yes
***nell
MOSFET, P CH, -20V, -60A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
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***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:45.6A; On Resistance Rds(On):0.0013Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
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20V, 50A, 2.3mohm, TrenchFET® power MOSFET, N-Channel, PowerPAK SO-8
***ical
Trans MOSFET N-CH 20V 35.4A 8-Pin PowerPAK SO EP T/R
***enic
20V 50A 2.3m´Î@10V15A 5.2W 1.5V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
***ment14 APAC
MOSFET,N CH,DIODE,20V,50A,PPAKSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1900µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35.4A; Power Dissipation Pd:5.2W; Voltage Vgs Max:12V
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***nell
MOSFET, P-CH, -20V, PPAK-SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***Yang
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***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
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20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
***(Formerly Allied Electronics)
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***trelec
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***ark
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***ineon
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***emi
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***r Electronics
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***rchild Semiconductor
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TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Бөлім № Mfg. Сипаттама Қор Бағасы
SI7137DP-T1-GE3
DISTI # V72:2272_09215622
Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R
RoHS: Compliant
1471
  • 1000:$1.1500
  • 500:$1.1905
  • 250:$1.3289
  • 100:$1.3320
  • 25:$1.6219
  • 10:$1.6276
  • 1:$1.8717
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
634In Stock
  • 1000:$1.2198
  • 500:$1.4722
  • 100:$1.8928
  • 10:$2.3560
  • 1:$2.6100
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
634In Stock
  • 1000:$1.2198
  • 500:$1.4722
  • 100:$1.8928
  • 10:$2.3560
  • 1:$2.6100
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$1.1026
SI7137DP-T1-GE3
DISTI # 27105003
Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R
RoHS: Compliant
1471
  • 1000:$1.1500
  • 500:$1.1905
  • 250:$1.3289
  • 100:$1.3320
  • 25:$1.6219
  • 10:$1.6276
  • 7:$1.8717
SI7137DP-T1-GE3
DISTI # SI7137DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7137DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.2900
  • 6000:$1.1900
  • 12000:$1.1900
  • 18000:$1.1900
  • 30000:$1.0900
SI7137DP-T1-GE3
DISTI # 63R6005
Vishay IntertechnologiesTrans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 63R6005)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$2.7700
  • 25:$2.3000
  • 50:$2.0500
  • 100:$1.7900
  • 250:$1.6800
  • 500:$1.5600
  • 1000:$1.5000
SI7137DP-T1-GE3Vishay IntertechnologiesSingle P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
RoHS: Compliant
9000Reel
  • 3000:$1.6500
SI7137DP-T1-GE3
DISTI # 781-SI7137DP-GE3
Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SO-8
RoHS: Compliant
28226
  • 1:$2.3100
  • 10:$1.9200
  • 100:$1.4900
  • 500:$1.3000
  • 1000:$1.2600
  • 3000:$1.2400
SI7137DP-T1-GE3
DISTI # 2335354
Vishay IntertechnologiesMOSFET, P CH, -20V, -60A, POWERPAK SO
RoHS: Compliant
5724
  • 1:£1.7700
  • 10:£1.4700
  • 100:£1.1500
  • 250:£1.0800
  • 500:£1.0100
SI7137DP-T1-GE3
DISTI # C1S804000723516
Vishay IntertechnologiesMOSFETs
RoHS: Compliant
1471
  • 250:$1.3258
  • 100:$1.3289
  • 25:$1.6162
  • 10:$1.6219
SI7137DP-T1-GE3
DISTI # 2335354
Vishay IntertechnologiesMOSFET, P CH, -20V, -60A, POWERPAK SO
RoHS: Compliant
4374
  • 1:$3.6600
  • 10:$3.0400
  • 100:$2.3700
  • 500:$2.0600
  • 1000:$1.9800
  • 3000:$1.9700
SI7137DP-T1-GE3
DISTI # XSFP00000063506
Vishay Siliconix 
RoHS: Compliant
10095
  • 3000:$3.3000
  • 10095:$3.0000
SI7137DP-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SO-8
RoHS: Compliant
Americas - 9000
  • 3000:$0.9980
  • 6000:$0.9620
  • 12000:$0.9250
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LDO Voltage Regulators Dual 300mA micropower ULDO, with POR
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Aluminum Electrolytic Capacitors - SMD 100uF 35V 20%
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Mfr.#: MIC5332-SSYMT-TR

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IC REG LINEAR 3.3V/3.3V 8TMLF
TPD4E02B04DQAR

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ESD Suppressor Diode Arrays 3.6V 10-Pin USON T/R
LMZM23601V5SILT

Mfr.#: LMZM23601V5SILT

OMO.#: OMO-LMZM23601V5SILT-TEXAS-INSTRUMENTS

36V NANO MODULE
RUF025N02FRATL

Mfr.#: RUF025N02FRATL

OMO.#: OMO-RUF025N02FRATL-ROHM-SEMI

NCH 20V 2.5A MIDDLE POWER MOSFET
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OMO.#: OMO-SN74LVC1G08QDCKRQ1-TEXAS-INSTRUMENTS

Жаңа және түпнұсқа
Қол жетімділік
Қор:
34
Тапсырыс бойынша:
2017
Саны енгізіңіз:
SI7137DP-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
2,30 $
2,30 $
10
1,91 $
19,10 $
100
1,48 $
148,00 $
500
1,29 $
645,00 $
1000
1,07 $
1 070,00 $
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