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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| RFP8N20L | HARTING Technology Group | Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 1150 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: RFP8P05 OMO.#: OMO-RFP8P05 |
MOSFET TO-220AB P-Ch Power |
|
Mfr.#: RFP80N06 OMO.#: OMO-RFP80N06-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: RFP8301 OMO.#: OMO-RFP8301-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: RFP8N18 OMO.#: OMO-RFP8N18-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: RFP8N18L OMO.#: OMO-RFP8N18L-1190 |
Power Field-Effect Transistor, 8A I(D), 180V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: RFP8N20 OMO.#: OMO-RFP8N20-1190 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
|
|
Mfr.#: RFP8P05+ OMO.#: OMO-RFP8P05--1190 |
MOSFET P-CH 50V 8A TO-220AB |
|
|
Mfr.#: RFP8P06LE OMO.#: OMO-RFP8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: RFP8P08 OMO.#: OMO-RFP8P08-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: RFP8P10 OMO.#: OMO-RFP8P10-1190 |
- Bulk (Alt: RFP8P10) |