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IPB60R120P7ATMA1

IPB60R120P7ATMA1
Mfr. #:
IPB60R120P7ATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET HIGH POWER_NEW
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB60R120P7ATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPB60R120P7ATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
26 A
Rds On - ағызу көзіне қарсылық:
100 mOhms
Vgs th - Gate-Source шекті кернеуі:
3 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
36 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
95 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Күз уақыты:
6 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
14 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
81 ns
Қосудың әдеттегі кешігу уақыты:
21 ns
Бөлім # Бүркеншік аттар:
IPB60R120P7 SP001664922
Tags
IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - D2PAK
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ark
Mosfet, N-Ch, 600V, 26A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB60R120P7ATMA1
DISTI # V72:2272_18787577		Infineon Technologies AGHIGH POWER_NEW950
  • 500:$2.1410
  • 250:$2.4120
  • 100:$2.5400
  • 25:$2.6320
  • 10:$2.9240
  • 1:$3.7796
IPB60R120P7ATMA1
DISTI # V36:1790_18787577		Infineon Technologies AGHIGH POWER_NEW0
  • 1000000:$1.5240
  • 500000:$1.5260
  • 100000:$1.6640
  • 10000:$1.8870
  • 1000:$1.9240
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1761In Stock
  • 500:$2.3491
  • 100:$2.7595
  • 10:$3.3680
  • 1:$3.7500
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1761In Stock
  • 500:$2.3491
  • 100:$2.7595
  • 10:$3.3680
  • 1:$3.7500
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 5000:$1.7586
  • 2000:$1.8273
  • 1000:$1.9235
IPB60R120P7ATMA1
DISTI # 33092983		Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$1.6389
IPB60R120P7ATMA1
DISTI # 33590324		Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$2.7812
IPB60R120P7ATMA1
DISTI # 32928341		Infineon Technologies AGHIGH POWER_NEW950
  • 4:$3.7796
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPB60R120P7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 4000:$1.6900
  • 1000:$1.7900
  • 2000:$1.7900
IPB60R120P7ATMA1
DISTI # SP001664922		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001664922)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€1.3900
  • 6000:€1.4900
  • 4000:€1.5900
  • 2000:€1.6900
  • 1000:€1.7900
IPB60R120P7ATMA1
DISTI # 49AC7996		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes0
  • 500:$2.1900
  • 250:$2.4400
  • 100:$2.5800
  • 50:$2.7100
  • 25:$2.8400
  • 10:$2.9700
  • 1:$3.4900
IPB60R120P7ATMA1
DISTI # 726-IPB60R120P7ATMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		17096
  • 1:$3.4600
  • 10:$2.9400
  • 100:$2.5500
  • 250:$2.4200
  • 500:$2.1700
  • 1000:$1.8300
  • 2000:$1.7400
IPB60R120P7ATMA1Infineon Technologies AGSingle N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - D2PAK
RoHS: Not Compliant		1000Reel
  • 1000:$1.7000
IPB60R120P7ATMA1
DISTI # 2841644		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-263
RoHS: Compliant		0
  • 1000:$2.6200
  • 500:$2.6700
  • 250:$2.8200
  • 100:$2.9800
  • 10:$3.3700
  • 1:$3.6100
IPB60R120P7ATMA1
DISTI # XSFP00000130966		Infineon Technologies AG 
RoHS: Compliant		2000 in Stock0 on Order
  • 2000:$2.2700
  • 1000:$2.4300
IPB60R120P7ATMA1
DISTI # 2841644		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-2630
  • 500:£1.7000
  • 250:£1.8800
  • 100:£1.9900
  • 10:£2.2900
  • 1:£3.0300
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Қол жетімділік
Қор:
17
Тапсырыс бойынша:
2000
Саны енгізіңіз:
IPB60R120P7ATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
3,46 $
3,46 $
10
2,94 $
29,40 $
100
2,55 $
255,00 $
250
2,42 $
605,00 $
500
2,17 $
1 085,00 $
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