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BSZ0500NSIATMA1

BSZ0500NSIATMA1
Mfr. #:
BSZ0500NSIATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET LV POWER MOS
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSZ0500NSIATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TSDSON-8
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.1 mm
Ұзындығы:
3.3 mm
Серия:
OptiMOS 5
Ені:
3.3 mm
Бренд:
Infineon Technologies
Өнім түрі:
MOSFET
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Бөлім # Бүркеншік аттар:
BSZ0500NSI SP001288150
Tags
BSZ050, BSZ05, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSZ0500NSI series 30V 40A 1.5 mOhm N-Ch S3O8 OptiMOS™ 5
***ineon SCT
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse
***ure Electronics
Single N-Channel 25 V 1.3 mOhm 37 nC OptiMOS™ Power Mosfet - TSDSON-8 FL
***ineon SCT
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse
***p One Stop
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
***ark
Mosfet, N Channel, 30V, 50A, To-252; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; On Resistance Rds(On):0.005Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 50 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 3 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 56
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:68W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ
***ure Electronics
N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56
***rchild Semiconductor
The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
***ark
MOSFET, P-CH, 30V, 50A, TO-252 ROHS COMPLIANT: YES
***et
P-CHANNEL 30-V (D-S) 175C MOSFET
***el Electronic
IC OPAMP GP 5.5MHZ RRO 8VSSOP
Бөлім № Mfg. Сипаттама Қор Бағасы
BSZ0500NSIATMA1
DISTI # V72:2272_13994217		Infineon Technologies AGTrans MOSFET N-CH 30V 30A T/R4500
  • 3000:$1.0005
  • 1000:$1.0230
  • 500:$1.1419
  • 250:$1.2666
  • 100:$1.3504
  • 25:$1.5701
  • 10:$1.6339
  • 1:$2.0307
BSZ0500NSIATMA1
DISTI # V36:1790_13994217		Infineon Technologies AGTrans MOSFET N-CH 30V 30A T/R0
  • 5000000:$0.7159
  • 2500000:$0.7162
  • 500000:$0.7451
  • 50000:$0.7975
  • 5000:$0.8063
BSZ0500NSIATMA1
DISTI # BSZ0500NSIATMA1-ND		Infineon Technologies AGMOSFET N-CH 30V 30A 8SON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.8063
BSZ0500NSIATMA1
DISTI # 31962849		Infineon Technologies AGTrans MOSFET N-CH 30V 30A T/R5000
  • 5000:$0.7071
BSZ0500NSIATMA1
DISTI # 32133352		Infineon Technologies AGTrans MOSFET N-CH 30V 30A T/R4500
  • 8:$2.0337
BSZ0500NSIATMA1
DISTI # BSZ0500NSIATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 8SON - Tape and Reel (Alt: BSZ0500NSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.7499
  • 30000:$0.7639
  • 20000:$0.7899
  • 10000:$0.8199
  • 5000:$0.8509
BSZ0500NSIATMA1
DISTI # SP001288150		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 8SON (Alt: SP001288150)
RoHS: Compliant
Min Qty: 5000		Europe - 0
  • 50000:€0.6719
  • 30000:€0.7239
  • 20000:€0.7839
  • 10000:€0.8549
  • 5000:€1.0459
BSZ0500NSIATMA1
DISTI # 726-BSZ0500NSIATMA1		Infineon Technologies AGMOSFET LV POWER MOS
RoHS: Compliant		0
  • 1:$1.7300
  • 10:$1.4700
  • 100:$1.1800
  • 500:$1.0300
  • 1000:$0.8570
  • 2500:$0.7980
  • 5000:$0.7680
  • 10000:$0.7390
Сурет Бөлім № Сипаттама
BSZ0500NSIATMA1

Mfr.#: BSZ0500NSIATMA1

OMO.#: OMO-BSZ0500NSIATMA1

 MOSFET LV POWER MOS
BSZ0500NSI

Mfr.#: BSZ0500NSI

OMO.#: OMO-BSZ0500NSI-1190

 N-CH 30V 40A 1,500mOhm TSDSON-8
BSZ0500NSIATMA1

Mfr.#: BSZ0500NSIATMA1

OMO.#: OMO-BSZ0500NSIATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 30A 8SON
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
4500
Саны енгізіңіз:
BSZ0500NSIATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,73 $
1,73 $
10
1,47 $
14,70 $
100
1,18 $
118,00 $
500
1,03 $
515,00 $
1000
0,86 $
857,00 $
2500
0,80 $
1 995,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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