VP2206N2

VP2206N2 Overview

Product belongs to the - series. Bulk is the packaging method for this product Through Hole Mounting-Style TO-205AD, TO-39-3 Metal Can Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-39 Configuration Single This product uses an MOSFET P-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 P-Channel 60V This product has an 450pF @ 25V value of 300pF @ 25V. This product's Standard. 750mA (Tj) continuous drain-ID current at 25°C; This product has an 900 mOhm @ 3.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 22 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 20 V. The ID of continuous drain current is - 750 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof - 60 V. The 900 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 16 ns This product has a 4 ns. This product operates in Enhancement channel mode for optimal performance.

VP2206N2 Image

VP2206N2 Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Single
• Series -
• Packaging Bulk
• Mounting-Style Through Hole
• Package-Case TO-205AD, TO-39-3 Metal Can
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-39
• Configuration Single
• FET-Type MOSFET P-Channel, Metal Oxide
• Power-Max 6W
• Transistor-Type 1 P-Channel
• Drain-to-Source-Voltage-Vdss 60V
• Input-Capacitance-Ciss-Vds 450pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 750mA (Tj)
• Rds-On-Max-Id-Vgs 900 mOhm @ 3.5A, 10V
• Vgs-th-Max-Id 3.5V @ 10mA
• Gate-Charge-Qg-Vgs -
• Pd-Power-Dissipation 6 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 22 ns
• Rise-Time 16 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current - 750 mA
• Vds-Drain-Source-Breakdown-Voltage - 60 V
• Rds-On-Drain-Source-Resistance 900 mOhms
• Transistor-Polarity P-Channel
• Typical-Turn-Off-Delay-Time 16 ns
• Typical-Turn-On-Delay-Time 4 ns
• Channel-Mode Enhancement

VP2206N2 FAQ

• A: At what frequency does the Series?

  Q: The product Series is -.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Bulk.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-205AD, TO-39-3 Metal Can.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-39.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET P-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 P-Channel

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 60V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 450pF @ 25V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 750mA (Tj).

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 900 mOhm @ 3.5A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 6 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 22 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 16 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is - 750 mA.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 60 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 900 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is P-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 16 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 4 ns.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement