| Mfr. #: | VN0109N3-G |
|---|---|
| Өндіруші: | Microchip Technology |
| Сипаттама: | IGBT Transistors MOSFET MOSFET N-CHANNEL ENHANCE-MODE 90V |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | VN0109N3-G Деректер тізімі |
Bulk is the packaging method for this product Weight of 0.016000 oz Through Hole Mounting-Style TO-92-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C The ID of continuous drain current is 350 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 90 V. The 5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
VN0109N3-G Specifications
A: What is the Packaging of the product?
Q: The Packaging of the product is Bulk.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.016000 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-92-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 1 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 350 mA
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 90 V
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 5 Ohms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement