| Mfr. #: | ULN2002AN |
|---|---|
| Өндіруші: | Texas Instruments |
| Сипаттама: | Darlington Transistors Hi-Vltg Hi-Crnt Darl Transistor Arrays |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | ULN2002AN Деректер тізімі |
Product belongs to the ULN2002A series. Tube Alternate Packaging is the packaging method for this product Weight of 0.033570 oz Through Hole Mounting-Style 16-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 16-PDIP Configuration Array 7 Transistor type: 7 NPN Darlington Maximum current collector Ic is 500mA . Maximum collector-emitter breakdown voltage of 50V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.6V @ 500μA, 350mA Maximum operating temperature of + 70 C Minimum operating temperature: - 20 C Rated VCEO up to 50 V The transistor polarity is NPN. Max DC collector current: 0.5 A
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ULN2002AN Specifications
A: At what frequency does the Series?
Q: The product Series is ULN2002A.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube Alternate Packaging
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.033570 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 16-DIP (0.300", 7.62mm).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 16-PDIP.
A: What is the Configuration of the product?
Q: The Configuration of the product is Array 7.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 7 NPN Darlington
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 500mA.
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 50V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is -.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 1.6V @ 500μA, 350mA.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 70 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 20 C.
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 50 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 0.5 A.