| Mfr. #: | STY80NM60N |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | MOSFET N-channel 600 V, 74A Power II Mdmesh |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STY80NM60N Деректер тізімі |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-247-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 74 A; The Rds On - Drain-Source Resistance of the product is 35 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 25 V. Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 200 ns - 55 C minimum operating temperature The power dissipation is 447 W. 65 ns Rise Time Product belongs to the N-channel MDmesh series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 440 ns; The 50 ns typical turn-on delay time The Unit Weight is 1.340411 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STY80NM60N Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is Through Hole.
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-247-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 600 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 74 A
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 35 mOhms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 25 V
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Fall Time?
Q: The product Fall Time is 200 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 447 W
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 65 ns.
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel MDmesh
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 440 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 50 ns.
A: At what frequency does the Unit Weight?
Q: The product Unit Weight is 1.340411 oz.