STY145N65M5

STY145N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: MAX247 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 18500pF @ 100V value of 300pF @ 25V. This product's Standard. 138A (Tc) continuous drain-ID current at 25°C; This product has an 15 mOhm @ 69A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 625 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 82 ns of 16 ns. This product has a 11 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 138 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 15 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 414 nC.

STY145N65M5 Image

STY145N65M5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series MDmesh V
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package MAX247
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 625W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 650V
• Input-Capacitance-Ciss-Vds 18500pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 138A (Tc)
• Rds-On-Max-Id-Vgs 15 mOhm @ 69A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 414nC @ 10V
• Pd-Power-Dissipation 625 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 82 ns
• Rise-Time 11 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 138 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 15 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 414 nC

STY145N65M5 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is MDmesh V.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 1.340411 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-247-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is MAX247.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 650V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 18500pF @ 100V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 138A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 15 mOhm @ 69A, 10V

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 625 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 82 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 11 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 25 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 138 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 15 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 414 nC.