STW9N150

STW9N150 Overview

Product belongs to the PowerMESH series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1500V (1.5kV) This product has an 3255pF @ 25V value of 300pF @ 25V. This product's Standard. 8A (Tc) continuous drain-ID current at 25°C; This product has an 2.5 Ohm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 320 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 52 ns of 16 ns. This product has a 14.7 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1500 V. The 2.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 86 ns This product has a 41 ns. This product operates in Enhancement channel mode for optimal performance.

STW9N150 Image

STW9N150 Specifications

• Manufacturer ST
• Product Category IC Chips
• Series PowerMESH
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247-3
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 320W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 1500V (1.5kV)
• Input-Capacitance-Ciss-Vds 3255pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 8A (Tc)
• Rds-On-Max-Id-Vgs 2.5 Ohm @ 4A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 89.3nC @ 10V
• Pd-Power-Dissipation 320 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 52 ns
• Rise-Time 14.7 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 8 A
• Vds-Drain-Source-Breakdown-Voltage 1500 V
• Rds-On-Drain-Source-Resistance 2.5 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 86 ns
• Typical-Turn-On-Delay-Time 41 ns
• Channel-Mode Enhancement

STW9N150 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed PowerMESH

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 1.340411 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-247-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-247-3.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 1500V (1.5kV).

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 3255pF @ 25V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 8A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 2.5 Ohm @ 4A, 10V

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 320 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 52 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 14.7 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 8 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 1500 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 2.5 Ohms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 86 ns

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 41 ns

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.