STW88N65M5

STW88N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 8825pF @ 100V value of 300pF @ 25V. This product's Standard. 84A (Tc) continuous drain-ID current at 25°C; This product has an 29 mOhm @ 42A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 450 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 25 V. The ID of continuous drain current is 84 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 29 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 204 nC. This product operates in Enhancement channel mode for optimal performance.

STW88N65M5 Image

STW88N65M5 Specifications

• Manufacturer STMicroelectronics
• Product Category IC Chips
• Series MDmesh V
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247-3
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 450W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 650V
• Input-Capacitance-Ciss-Vds 8825pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 84A (Tc)
• Rds-On-Max-Id-Vgs 29 mOhm @ 42A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 204nC @ 10V
• Pd-Power-Dissipation 450 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 84 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Rds-On-Drain-Source-Resistance 29 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 204 nC
• Channel-Mode Enhancement

STW88N65M5 FAQ

• A: At what frequency does the Series?

  Q: The product Series is MDmesh V.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 1.340411 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-247-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed 150°C (TJ)

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-247-3.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 650V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 8825pF @ 100V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 84A (Tc).

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 29 mOhm @ 42A, 10V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 450 W

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 84 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 29 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 204 nC

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement