STW57N65M5-4

STW57N65M5-4 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Through Hole Mounting-Style TO-247-4 Si is the technology used. Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns of 16 ns. This product has a 9 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 42 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 63 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 98 nC.

STW57N65M5-4 Image

STW57N65M5-4 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series MDmesh M5
• Packaging Tube
• Mounting-Style Through Hole
• Package-Case TO-247-4
• Technology Si
• Pd-Power-Dissipation 250 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 8 ns
• Rise-Time 9 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 42 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 63 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 98 nC

STW57N65M5-4 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed MDmesh M5

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-247-4

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 250 W

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 8 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 9 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 25 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 42 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 63 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 98 nC.