STW54NM65ND

Mfr. #: STW54NM65ND
Өндіруші: STMicroelectronics
Сипаттама: IGBT Transistors MOSFET N-Ch 650V 0.055 Ohm 49A FDmesh II
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STW54NM65ND Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW54NM65ND Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 350 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 25 V. The ID of continuous drain current is 49 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 65 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 188 nC.

STW54NM65ND Image

STW54NM65ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW54NM65ND Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 350 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 49 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Rds-On-Drain-Source-Resistance 65 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 188 nC

STW54NM65ND

STW54NM65ND Specifications

STW54NM65ND FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed N-channel MDmesh

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 1.340411 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 350 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 49 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 65 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 188 nC

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1
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