| Mfr. #: | STW27N60M2-EP |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | MOSFET N-CH 600V 20A TO-220 |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STW27N60M2-EP Деректер тізімі |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-247-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 20 A; The Rds On - Drain-Source Resistance of the product is 163 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 2 V Gate-Source Threshold Voltage of Vgs th; 33 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 6.3 ns - 55 C minimum operating temperature The power dissipation is 170 W. 8.1 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 55.6 ns; The 13.4 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW27N60M2-EP Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-247-3.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 600 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 20 A
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 163 mOhms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed +/- 25 V
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 2 V
A: What is the Qg - Gate Charge of the product?
Q: The Qg - Gate Charge of the product is 33 nC.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed 1 N-Channel
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 6.3 ns
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 170 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 8.1 ns.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 55.6 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 13.4 ns.