| Mfr. #: | STW23N85K5 |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | MOSFET N-CH 850V 19A TO-247 |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STW23N85K5 Деректер тізімі |
Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns of 16 ns. This product has a 14 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 19 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 850 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 275 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 55 ns This product has a 22 ns. Qg-Gate-Charge is 38 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW23N85K5 Specifications
A: What is the Series of the product?
Q: The Series of the product is MDmesh K5.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 1.340411 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-247-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 250 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 8 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 14 ns
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 30 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 19 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 850 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 275 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 55 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 22 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 38 nC.