STW15NK90Z

STW15NK90Z Overview

Product belongs to the SuperMESH series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 900V This product has an 6100pF @ 25V value of 300pF @ 25V. This product's Standard. 15A (Tc) continuous drain-ID current at 25°C; This product has an 550 mOhm @ 7.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 350 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 35 ns of 16 ns. This product has a 27 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 15 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 900 V. The 550 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 135 ns This product has a 42 ns. Qg-Gate-Charge is 190 nC. This product operates in Enhancement channel mode for optimal performance.

STW15NK90Z Image

STW15NK90Z Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series SuperMESH
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247-3
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 350W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 900V
• Input-Capacitance-Ciss-Vds 6100pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 15A (Tc)
• Rds-On-Max-Id-Vgs 550 mOhm @ 7.5A, 10V
• Vgs-th-Max-Id 4.5V @ 150μA
• Gate-Charge-Qg-Vgs 256nC @ 10V
• Pd-Power-Dissipation 350 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 35 ns
• Rise-Time 27 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 15 A
• Vds-Drain-Source-Breakdown-Voltage 900 V
• Rds-On-Drain-Source-Resistance 550 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 135 ns
• Typical-Turn-On-Delay-Time 42 ns
• Qg-Gate-Charge 190 nC
• Channel-Mode Enhancement

STW15NK90Z FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed SuperMESH

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 1.340411 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-247-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-247-3.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 900V

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 6100pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 15A (Tc).

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 550 mOhm @ 7.5A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 350 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 35 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 27 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 15 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 900 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 550 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 135 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 42 ns

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 190 nC.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement