STW11NK100Z

Mfr. #: STW11NK100Z
Өндіруші: STMicroelectronics
Сипаттама: MOSFET N-CH 1KV 8.3A TO-247
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STW11NK100Z Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW11NK100Z Overview

Product belongs to the SuperMESH series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1000V (1kV) This product has an 3500pF @ 25V value of 300pF @ 25V. This product's Standard. 8.3A (Tc) continuous drain-ID current at 25°C; This product has an 1.38 Ohm @ 4.15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 230 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 55 ns of 16 ns. This product has a 18 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 8.3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1000 V. The 1.38 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 98 ns This product has a 27 ns. Qg-Gate-Charge is 113 nC. This product operates in Enhancement channel mode for optimal performance.

STW11NK100Z Image

STW11NK100Z

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW11NK100Z Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-247-3
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 230W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 1000V (1kV)
  • Input-Capacitance-Ciss-Vds 3500pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 8.3A (Tc)
  • Rds-On-Max-Id-Vgs 1.38 Ohm @ 4.15A, 10V
  • Vgs-th-Max-Id 4.5V @ 100μA
  • Gate-Charge-Qg-Vgs 162nC @ 10V
  • Pd-Power-Dissipation 230 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 55 ns
  • Rise-Time 18 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 8.3 A
  • Vds-Drain-Source-Breakdown-Voltage 1000 V
  • Rds-On-Drain-Source-Resistance 1.38 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 98 ns
  • Typical-Turn-On-Delay-Time 27 ns
  • Qg-Gate-Charge 113 nC
  • Channel-Mode Enhancement

STW11NK100Z

STW11NK100Z Specifications

STW11NK100Z FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is SuperMESH.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 1.340411 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-247-3

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-247-3.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 1000V (1kV).

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 3500pF @ 25V

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 8.3A (Tc)

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 1.38 Ohm @ 4.15A, 10V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 230 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 55 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 18 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 8.3 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 1000 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 1.38 Ohms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 98 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 27 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 113 nC.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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