STU7NM60N

STU7NM60N Overview

Product belongs to the MDmesh II series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style TO-251-3 Short Leads, IPak, TO-251AA Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: I-Pak Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 363pF @ 50V value of 300pF @ 25V. This product's Standard. 5A (Tc) continuous drain-ID current at 25°C; This product has an 900 mOhm @ 2.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 45 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 12 ns of 16 ns. This product has a 10 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 900 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 26 ns This product has a 7 ns. Qg-Gate-Charge is 14 nC. This product operates in Enhancement channel mode for optimal performance.

STU7NM60N Image

STU7NM60N Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series MDmesh II
• Packaging Tube
• Unit-Weight 0.139332 oz
• Mounting-Style Through Hole
• Package-Case TO-251-3 Short Leads, IPak, TO-251AA
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package I-Pak
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 45W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 600V
• Input-Capacitance-Ciss-Vds 363pF @ 50V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 5A (Tc)
• Rds-On-Max-Id-Vgs 900 mOhm @ 2.5A, 10V
• Vgs-th-Max-Id 4V @ 250μA
• Gate-Charge-Qg-Vgs 14nC @ 10V
• Pd-Power-Dissipation 45 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 12 ns
• Rise-Time 10 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 5 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Rds-On-Drain-Source-Resistance 900 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 26 ns
• Typical-Turn-On-Delay-Time 7 ns
• Qg-Gate-Charge 14 nC
• Channel-Mode Enhancement

STU7NM60N FAQ

• A: At what frequency does the Series?

  Q: The product Series is MDmesh II.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-251-3 Short Leads, IPak, TO-251AA.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed 150°C (TJ)

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is I-Pak.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 600V

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 363pF @ 50V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 5A (Tc).

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 900 mOhm @ 2.5A, 10V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 45 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 12 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 10 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 5 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 900 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 26 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 7 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 14 nC

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.