| Mfr. #: | STU10NM60N |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | MOSFET N-CH 600V 10A IPAK |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STU10NM60N Деректер тізімі |
Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style IPAK-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel The ID of continuous drain current is 8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 530 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STU10NM60N Specifications
A: What is the Series of the product?
Q: The Series of the product is N-channel MDmesh.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.139332 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed IPAK-3
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 8 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 530 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.