| Mfr. #: | STS8C5H30L |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | MOSFET N/P-CH 30V 8A/5.4A 8SOIC |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STS8C5H30L Деректер тізімі |
Product belongs to the STripFET III series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.002998 oz SMD/SMT Mounting-Style 8-SOIC (0.154", 3.90mm Width) Si is the technology used. Operational temperature range: 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-SO Configuration Dual Dual Drain This product uses an N and P-Channel FET-Type transistor. Transistor type: 1 N-Channel 1 P-Channel 30V This product has an 857pF @ 25V value of 300pF @ 25V. This product's Logic Level Gate. 8A, 5.4A continuous drain-ID current at 25°C; This product has an 22 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns 35 ns of 16 ns. This product has a 14.5 ns 35 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 22 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel P-Channel. 'Typical-Turn-Off-Delay-Time' of 23 ns 125 ns This product has a 12 ns 25 ns. Qg-Gate-Charge is 7 nC. This product features a 8.5 S 10 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STS8C5H30L Specifications
A: At what frequency does the Series?
Q: The product Series is STripFET III.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.002998 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 8-SOIC (0.154", 3.90mm Width).
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is 150°C (TJ).
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 2 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 8-SO
A: At what frequency does the Configuration?
Q: The product Configuration is Dual Dual Drain.
A: At what frequency does the FET-Type?
Q: The product FET-Type is N and P-Channel.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel 1 P-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 857pF @ 25V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Logic Level Gate.
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 8A, 5.4A.
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 22 mOhm @ 4A, 10V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 2 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 8 ns 35 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 14.5 ns 35 ns
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 16 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 8 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.5 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 22 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel P-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 23 ns 125 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 12 ns 25 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 7 nC
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 8.5 S 10 S.
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.