STP80NF70

Mfr. #: STP80NF70
Өндіруші: STMicroelectronics
Сипаттама: MOSFET N-CH 68V 98A TO-220AB
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STP80NF70 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP80NF70 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 190 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 75 ns of 16 ns. This product has a 60 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 98 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 68 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 9.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 90 ns This product has a 17 ns. Qg-Gate-Charge is 75 nC. This product features a 60 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP80NF70 Image

STP80NF70

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP80NF70 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel STripFET
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 190 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 75 ns
  • Rise-Time 60 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 98 A
  • Vds-Drain-Source-Breakdown-Voltage 68 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 9.8 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 90 ns
  • Typical-Turn-On-Delay-Time 17 ns
  • Qg-Gate-Charge 75 nC
  • Forward-Transconductance-Min 60 S
  • Channel-Mode Enhancement

STP80NF70

STP80NF70 Specifications

STP80NF70 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel STripFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 190 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 75 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 60 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 98 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 68 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 9.8 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 90 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 17 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 75 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 60 S

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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10
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