STP77N6F6

Mfr. #: STP77N6F6
Өндіруші: STMicroelectronics
Сипаттама: Darlington Transistors MOSFET N-Ch 60V 6.6mOhm 77A STripFET VI
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STP77N6F6 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP77N6F6 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Power-off control: 80 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C The ID of continuous drain current is 77 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. The 7.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 76 nC.

STP77N6F6 Image

STP77N6F6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP77N6F6 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel STripFET
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Pd-Power-Dissipation 80 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Id-Continuous-Drain-Current 77 A
  • Vds-Drain-Source-Breakdown-Voltage 60 V
  • Rds-On-Drain-Source-Resistance 7.9 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 76 nC

STP77N6F6

STP77N6F6 Specifications

STP77N6F6 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed N-channel STripFET

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 80 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 77 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 7.9 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 76 nC.

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