| Mfr. #: | STP5NK80Z |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | MOSFET N-CH 800V 4.3A TO-220 |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STP5NK80Z Деректер тізімі |


Product belongs to the PowerMESH series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 800V This product has an 910pF @ 25V value of 300pF @ 25V. This product's Standard. 4.3A (Tc) continuous drain-ID current at 25°C; This product has an 2.4 Ohm @ 2.15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 30 ns of 16 ns. This product has a 25 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 4.3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. The 2.4 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 45 ns This product has a 18 ns. Qg-Gate-Charge is 32.4 nC. This product features a 4.25 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP5NK80Z Specifications
A: At what frequency does the Series?
Q: The product Series is PowerMESH.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.050717 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-220AB.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the FET-Type?
Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: At what frequency does the Drain-to-Source-Voltage-Vdss?
Q: The product Drain-to-Source-Voltage-Vdss is 800V.
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 910pF @ 25V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Standard.
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 4.3A (Tc).
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 2.4 Ohm @ 2.15A, 10V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 30 ns
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 25 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 4.3 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 800 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 2.4 Ohms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 45 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 18 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 32.4 nC.
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed 4.25 S
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.