| Mfr. #: | STP5N105K5 |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | IGBT Transistors MOSFET POWER MOSFET |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STP5N105K5 Деректер тізімі |


Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 85 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 24 ns of 16 ns. This product has a 8.5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1050 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 3.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 31 ns This product has a 15.5 ns. Qg-Gate-Charge is 12.5 nC. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP5N105K5 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed MDmesh K5
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.011640 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 85 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 24 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 8.5 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 30 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 3 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 1050 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 3.5 Ohms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 31 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 15.5 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 12.5 nC.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement