STP34NM60ND

Mfr. #: STP34NM60ND
Өндіруші: STMicroelectronics
Сипаттама: MOSFET N-CH 600V 29A TO-220AB
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STP34NM60ND Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP34NM60ND Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 190 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 61.8 ns of 16 ns. This product has a 53.4 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 29 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 110 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 111 ns This product has a 30 ns. Qg-Gate-Charge is 80.4 nC. This product operates in Enhancement channel mode for optimal performance.

STP34NM60ND Image

STP34NM60ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP34NM60ND Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 190 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 61.8 ns
  • Rise-Time 53.4 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 29 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 110 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 111 ns
  • Typical-Turn-On-Delay-Time 30 ns
  • Qg-Gate-Charge 80.4 nC
  • Channel-Mode Enhancement

STP34NM60ND

STP34NM60ND Specifications

STP34NM60ND FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel MDmesh.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 190 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 61.8 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 53.4 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 25 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 29 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 110 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 111 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 30 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 80.4 nC.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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