STP2NK100Z

STP2NK100Z Overview

Product belongs to the SuperMESH series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1000V (1kV) This product has an 499pF @ 25V value of 300pF @ 25V. This product's Standard. 1.85A (Tc) continuous drain-ID current at 25°C; This product has an 8.5 Ohm @ 900mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 70 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 30 V. The ID of continuous drain current is 2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1000 V. The 8.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 16 nC. This product operates in Enhancement channel mode for optimal performance.

STP2NK100Z Image

STP2NK100Z Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series SuperMESH
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220AB
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 70W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 1000V (1kV)
• Input-Capacitance-Ciss-Vds 499pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 1.85A (Tc)
• Rds-On-Max-Id-Vgs 8.5 Ohm @ 900mA, 10V
• Vgs-th-Max-Id 4.5V @ 50μA
• Gate-Charge-Qg-Vgs 16nC @ 10V
• Pd-Power-Dissipation 70 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 2 A
• Vds-Drain-Source-Breakdown-Voltage 1000 V
• Rds-On-Drain-Source-Resistance 8.5 Ohms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 16 nC
• Channel-Mode Enhancement

STP2NK100Z FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed SuperMESH

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.011640 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-220AB.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 1000V (1kV)

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 499pF @ 25V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 1.85A (Tc).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 8.5 Ohm @ 900mA, 10V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 70 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2 A

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 1000 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 8.5 Ohms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 16 nC.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement