STP21N65M5

Mfr. #: STP21N65M5
Өндіруші: STMicroelectronics
Сипаттама: MOSFET N-CH 650V 17A TO-220
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STP21N65M5 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP21N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 125 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 30 V. The ID of continuous drain current is 17 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 150 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 50 nC.

STP21N65M5 Image

STP21N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP21N65M5 Specifications
  • Manufacturer STMICROELECTRONICS
  • Product Category FETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 125 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 17 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Rds-On-Drain-Source-Resistance 150 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 50 nC

STP21N65M5

STP21N65M5 Specifications

STP21N65M5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh M5.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 125 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 17 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 150 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 50 nC.

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1
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10
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100
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500
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