| Mfr. #: | STP210N75F6 |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | IGBT Transistors MOSFET N-Ch 75V 3mOhm 120A STripFET VI |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STP210N75F6 Деректер тізімі |


Product belongs to the STP210N75F6 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product's 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 75 V. The 3.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 171 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP210N75F6 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed STP210N75F6
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.011640 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 300 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 175 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 120 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 75 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 3.7 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 171 nC.