STP110N55F6

Mfr. #: STP110N55F6
Өндіруші: STMicroelectronics
Сипаттама: MOSFET N CH 55V 110A TO-220
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STP110N55F6 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP110N55F6 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Power-off control: 150 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C The ID of continuous drain current is 110 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 55 V. The 5.2 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 120 nC.

STP110N55F6 Image

STP110N55F6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP110N55F6 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel STripFET
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Pd-Power-Dissipation 150 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Id-Continuous-Drain-Current 110 A
  • Vds-Drain-Source-Breakdown-Voltage 55 V
  • Rds-On-Drain-Source-Resistance 5.2 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 120 nC

STP110N55F6

STP110N55F6 Specifications

STP110N55F6 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel STripFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.011640 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 150 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 110 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 55 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 5.2 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 120 nC.

1680 In Stock
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