STN1NK60Z

STN1NK60Z Overview

Product belongs to the SuperMESH series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.004395 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: SOT-223 Configuration Single Dual Drain This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 94pF @ 25V value of 300pF @ 25V. This product's Standard. 300mA (Tc) continuous drain-ID current at 25°C; This product has an 15 Ohm @ 400mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 3.3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 18 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 300 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 15 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 5.5 ns. Qg-Gate-Charge is 4.9 nC. This product features a 0.5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STN1NK60Z Image

STN1NK60Z Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series SuperMESH
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.004395 oz
• Mounting-Style SMD/SMT
• Package-Case TO-261-4, TO-261AA
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package SOT-223
• Configuration Single Dual Drain
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 3.3W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 600V
• Input-Capacitance-Ciss-Vds 94pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 300mA (Tc)
• Rds-On-Max-Id-Vgs 15 Ohm @ 400mA, 10V
• Vgs-th-Max-Id 4.5V @ 50μA
• Gate-Charge-Qg-Vgs 6.9nC @ 10V
• Pd-Power-Dissipation 3.3 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 18 ns
• Rise-Time 5 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 300 mA
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Rds-On-Drain-Source-Resistance 15 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 13 ns
• Typical-Turn-On-Delay-Time 5.5 ns
• Qg-Gate-Charge 4.9 nC
• Forward-Transconductance-Min 0.5 S
• Channel-Mode Enhancement

STN1NK60Z FAQ

• A: What is the Series of the product?

  Q: The Series of the product is SuperMESH.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.004395 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-261-4, TO-261AA.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Surface Mount.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is SOT-223.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single Dual Drain.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 600V

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 94pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 300mA (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 15 Ohm @ 400mA, 10V

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 3.3 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 18 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 5 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 300 mA.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 15 Ohms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 13 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 5.5 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 4.9 nC

• A: At what frequency does the Forward-Transconductance-Min?

  Q: The product Forward-Transconductance-Min is 0.5 S.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement