STL57N65M5

Mfr. #: STL57N65M5
Өндіруші: STMicroelectronics
Сипаттама: MOSFET N-CH 650V 4.3A 8POWERFLAT
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STL57N65M5 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL57N65M5 Overview

Product belongs to the MDmesh M5 series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Power-off control: 189 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 11 ns of 16 ns. This product has a 10.8 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 22.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 61 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 96 nC.

STL57N65M5 Image

STL57N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL57N65M5 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series MDmesh M5
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerFlat-8
  • Technology Si
  • Pd-Power-Dissipation 189 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 11 ns
  • Rise-Time 10.8 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 22.5 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 61 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 96 nC

STL57N65M5

STL57N65M5 Specifications

STL57N65M5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh M5.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is PowerFlat-8.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 189 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 11 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 10.8 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 25 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 22.5 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 61 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 96 nC.

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