STL3NM60N

STL3NM60N Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 2 W This product has a 20 ns of 16 ns. This product has a 6.2 ns of 16 ns. The ID of continuous drain current is 2.2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 1.8 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20.8 ns This product has a 8.6 ns. Qg-Gate-Charge is 9.5 nC. This product operates in Enhancement channel mode for optimal performance.

STL3NM60N Image

STL3NM60N Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel MDmesh
• Packaging Reel
• Mounting-Style SMD/SMT
• Package-Case PowerFlat-8
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 2 W
• Fall-Time 20 ns
• Rise-Time 6.2 ns
• Id-Continuous-Drain-Current 2.2 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 1.8 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 20.8 ns
• Typical-Turn-On-Delay-Time 8.6 ns
• Qg-Gate-Charge 9.5 nC
• Channel-Mode Enhancement

STL3NM60N FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed N-channel MDmesh

• A: At what frequency does the Packaging?

  Q: The product Packaging is Reel.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is PowerFlat-8.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 2 W.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 20 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 6.2 ns.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 2.2 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 1.8 Ohms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 20.8 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 8.6 ns.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 9.5 nC.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.