| Mfr. #: | STH130N10F3-2 |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | MOSFET N-CH 100V 120A H2PAK-2 |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STH130N10F3-2 Деректер тізімі |
Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Power-off control: 250 W The ID of continuous drain current is 78 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. The 9.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STH130N10F3-2 Specifications
A: At what frequency does the Series?
Q: The product Series is N-channel STripFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Reel.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.139332 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-252-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 250 W.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 78 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 9.3 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.