| Mfr. #: | STFU13N65M2 |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | MOSFET N-CH 650V 10A TO-220FP |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STFU13N65M2 Деректер тізімі |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-220FP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 650 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 10 A; The Rds On - Drain-Source Resistance of the product is 430 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 17 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Fall Time of 12 ns - 55 C minimum operating temperature The power dissipation is 25 W. 7.8 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 38 ns; The 11 ns typical turn-on delay time The Unit Weight is 0.081130 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STFU13N65M2 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed TO-220FP-3
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 650 V
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 10 A
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 430 mOhms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed +/- 25 V
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 3 V.
A: What is the Qg - Gate Charge of the product?
Q: The Qg - Gate Charge of the product is 17 nC.
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 12 ns
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 25 W
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 7.8 ns.
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 38 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 11 ns.
A: At what frequency does the Unit Weight?
Q: The product Unit Weight is 0.081130 oz.