STFI34N65M5

Mfr. #: STFI34N65M5
Өндіруші: STMicroelectronics
Сипаттама: IGBT Transistors MOSFET N-Ch 650 V 0.09 Ohm 28 A MDmesh(TM) V
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STFI34N65M5 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STFI34N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Through Hole Mounting-Style Trade name: MDmesh. I2PAKFP-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 35 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 7.5 ns of 16 ns. This product has a 8.7 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 28 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 90 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 62.5 nC. This product operates in Enhancement channel mode for optimal performance.

STFI34N65M5 Image

STFI34N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STFI34N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Mounting-Style Through Hole
  • Tradename MDmesh
  • Package-Case I2PAKFP-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 35 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 7.5 ns
  • Rise-Time 8.7 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 28 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 90 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 62.5 nC
  • Channel-Mode Enhancement

STFI34N65M5

STFI34N65M5 Specifications

STFI34N65M5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh M5.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is MDmesh.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is I2PAKFP-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 35 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 7.5 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 8.7 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 28 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 90 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 62.5 nC.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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