STFI15N65M5

Mfr. #: STFI15N65M5
Өндіруші: STMicroelectronics
Сипаттама: RF Bipolar Transistors MOSFET N-Ch 650 V 0.308 Ohm 11 A MDmesh(TM) V
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STFI15N65M5 Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STFI15N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Through Hole Mounting-Style Trade name: MDmesh. I2PAKFP-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 11 ns of 16 ns. This product has a 8 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 308 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 22 nC. This product operates in Enhancement channel mode for optimal performance.

STFI15N65M5 Image

STFI15N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STFI15N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Mounting-Style Through Hole
  • Tradename MDmesh
  • Package-Case I2PAKFP-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 25 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 11 ns
  • Rise-Time 8 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 11 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 308 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 22 nC
  • Channel-Mode Enhancement

STFI15N65M5

STFI15N65M5 Specifications

STFI15N65M5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh M5.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed MDmesh

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed I2PAKFP-3

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 25 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 11 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 8 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 11 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 308 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 22 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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