STF8NK100Z

Mfr. #: STF8NK100Z
Өндіруші: STMicroelectronics
Сипаттама: MOSFET N-CH 1000V 6.5A TO220FP
Өміршеңдік кезең: Осы өндірушіден жаңа.
Деректер тізімі: STF8NK100Z Деректер тізімі
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF8NK100Z Overview

Product belongs to the SuperMESH series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Full Pack Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220FP Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1000V (1kV) This product has an 2180pF @ 25V value of 300pF @ 25V. This product's Standard. 6.5A (Tc) continuous drain-ID current at 25°C; This product has an 1.85 Ohm @ 3.15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 40 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 30 ns of 16 ns. This product has a 19 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1000 V. The 1.6 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 59 ns This product has a 28 ns. This product features a 7 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STF8NK100Z Image

STF8NK100Z

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF8NK100Z Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3 Full Pack
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220FP
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 40W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 1000V (1kV)
  • Input-Capacitance-Ciss-Vds 2180pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 6.5A (Tc)
  • Rds-On-Max-Id-Vgs 1.85 Ohm @ 3.15A, 10V
  • Vgs-th-Max-Id 4.5V @ 100μA
  • Gate-Charge-Qg-Vgs 102nC @ 10V
  • Pd-Power-Dissipation 40 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 30 ns
  • Rise-Time 19 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 6.5 A
  • Vds-Drain-Source-Breakdown-Voltage 1000 V
  • Rds-On-Drain-Source-Resistance 1.6 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 59 ns
  • Typical-Turn-On-Delay-Time 28 ns
  • Forward-Transconductance-Min 7 S
  • Channel-Mode Enhancement

STF8NK100Z

STF8NK100Z Specifications

STF8NK100Z FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed SuperMESH

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3 Full Pack.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-220FP

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 1000V (1kV).

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 2180pF @ 25V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 6.5A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 1.85 Ohm @ 3.15A, 10V

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 40 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 30 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 19 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 6.5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 1000 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 1.6 Ohms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 59 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 28 ns.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 7 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,45 $
1,45 $
10
1,38 $
13,79 $
100
1,31 $
130,68 $
500
1,23 $
617,10 $
1000
1,16 $
1 161,60 $
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