| Mfr. #: | STF3N62K3 |
|---|---|
| Өндіруші: | STMicroelectronics |
| Сипаттама: | MOSFET N-CH 620V 2.7A TO-220FP |
| Өміршеңдік кезең: | Осы өндірушіден жаңа. |
| Деректер тізімі: | STF3N62K3 Деректер тізімі |
RoHS compliant with Details Input bias current of SMD/SMT Package type is PQFN-8 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 30 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 100 A; The Rds On - Drain-Source Resistance of the product is 1.4 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 20 V. The 1.8 V Gate-Source Threshold Voltage of Vgs th; 120 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Reel is the packaging method for this product Configuration Single Fall Time of 13 ns Minimum Forward Transconductance of 190 S. - 55 C minimum operating temperature The power dissipation is 3.6 W. 30 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 31 ns; The 26 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STF3N62K3 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: At what frequency does the Package / Case?
Q: The product Package / Case is PQFN-8.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 30 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 100 A
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 1.4 mOhms.
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is 20 V.
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 1.8 V.
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 120 nC
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 13 ns
A: What is the Forward Transconductance - Min of the product?
Q: The Forward Transconductance - Min of the product is 190 S.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 3.6 W.
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 30 ns.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 31 ns
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 26 ns.